Invention Grant
US09373509B2 FINFET doping method with curvilnear trajectory implantation beam path
有权
FINFET掺杂方法与弯曲轨迹注入光束路径
- Patent Title: FINFET doping method with curvilnear trajectory implantation beam path
- Patent Title (中): FINFET掺杂方法与弯曲轨迹注入光束路径
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Application No.: US14477358Application Date: 2014-09-04
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Publication No.: US09373509B2Publication Date: 2016-06-21
- Inventor: Ralf Richter , Stefan Flachowsky , Peter Javorka , Jan Hoentschel
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L21/30
- IPC: H01L21/30 ; C23C14/48 ; H01L21/336 ; H01L21/265 ; H01L29/78 ; H01L29/66 ; H01L21/8234 ; H01L21/266 ; H01L21/3065 ; H01J37/32
Abstract:
A method to implant dopants onto fin-type field-effect-transistor (FINFET) fin surfaces with uniform concentration and depth levels of the dopants and the resulting device are disclosed. Embodiments include a method for pulsing a dopant perpendicular to an upper surface of a substrate, forming an implantation beam pulse; applying an electric or a magnetic field to the implantation beam pulse to effectuate a curvilinear trajectory path of the implantation beam pulse; and implanting the dopant onto a sidewall surface of a target FINFET fin on the upper surface of the substrate via the curvilinear trajectory path of the implantation beam pulse.
Public/Granted literature
- US20160071731A1 FINFET DOPING METHOD WITH CURVILINEAR TRAJECTORY IMPLANTATION BEAM PATH Public/Granted day:2016-03-10
Information query
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