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US09373509B2 FINFET doping method with curvilnear trajectory implantation beam path 有权
FINFET掺杂方法与弯曲轨迹注入光束路径

FINFET doping method with curvilnear trajectory implantation beam path
Abstract:
A method to implant dopants onto fin-type field-effect-transistor (FINFET) fin surfaces with uniform concentration and depth levels of the dopants and the resulting device are disclosed. Embodiments include a method for pulsing a dopant perpendicular to an upper surface of a substrate, forming an implantation beam pulse; applying an electric or a magnetic field to the implantation beam pulse to effectuate a curvilinear trajectory path of the implantation beam pulse; and implanting the dopant onto a sidewall surface of a target FINFET fin on the upper surface of the substrate via the curvilinear trajectory path of the implantation beam pulse.
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