Invention Grant
US09373693B2 Nonplanar III-N transistors with compositionally graded semiconductor channels
有权
具有组成分级半导体通道的非平面III-N晶体管
- Patent Title: Nonplanar III-N transistors with compositionally graded semiconductor channels
- Patent Title (中): 具有组成分级半导体通道的非平面III-N晶体管
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Application No.: US14535240Application Date: 2014-11-06
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Publication No.: US09373693B2Publication Date: 2016-06-21
- Inventor: Han Wui Then , Sansaptak Dasgupta , Marko Radosavljevic , Benjamin Chu-Kung , Seung Hoon Sung , Sanaz K. Gardner , Robert S. Chau
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/18
- IPC: H01L21/18 ; H01L21/336 ; H01L29/66 ; H01L29/772 ; H01L21/02 ; H01L29/20 ; H01L29/423 ; H01L29/78 ; H01L29/786
Abstract:
A III-N semiconductor channel is compositionally graded between a transition layer and a III-N polarization layer. In embodiments, a gate stack is deposited over sidewalls of a fin including the graded III-N semiconductor channel allowing for formation of a transport channel in the III-N semiconductor channel adjacent to at least both sidewall surfaces in response to a gate bias voltage. In embodiments, a gate stack is deposited completely around a nanowire including a III-N semiconductor channel compositionally graded to enable formation of a transport channel in the III-N semiconductor channel adjacent to both the polarization layer and the transition layer in response to a gate bias voltage.
Public/Granted literature
- US20150064859A1 NONPLANAR III-N TRANSISTORS WITH COMPOSITIONALLY GRADED SEMICONDUCTOR CHANNELS Public/Granted day:2015-03-05
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