Invention Grant
- Patent Title: Method for writing to a magnetic tunnel junction device
- Patent Title (中): 写入磁隧道连接装置的方法
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Application No.: US14580379Application Date: 2014-12-23
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Publication No.: US09378796B2Publication Date: 2016-06-28
- Inventor: Syed M. Alam , Thomas Andre
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G11C11/15
Abstract:
A method of applying a write current to a magnetic tunnel junction device minimizes sub-threshold leakage. NMOS- and PMOS-follower circuits are used in applying the write current, and bias signals for the follower circuits are isolated from global bias signals before the write current is applied.
Public/Granted literature
- US20150109854A1 METHOD FOR WRITING TO A MAGNETIC TUNNEL JUNCTION DEVICE Public/Granted day:2015-04-23
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