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US09378811B2 Methods of operating variable resistance memory devices 有权
操作可变电阻存储器件的方法

Methods of operating variable resistance memory devices
Abstract:
A method of operating a resistive non-volatile memory can be provided by applying a forming voltage across first and second electrodes of a selected memory cell in the variable resistance non-volatile memory device during an operation to the selected memory cell. The forming voltage can be a voltage level that is limited to less than a breakdown voltage of an insulation film included in selected memory cell between a variable resistance film and one of first electrode. Related devices and materials are also disclosed.
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