Invention Grant
- Patent Title: Methods of operating variable resistance memory devices
- Patent Title (中): 操作可变电阻存储器件的方法
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Application No.: US14021412Application Date: 2013-09-09
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Publication No.: US09378811B2Publication Date: 2016-06-28
- Inventor: Hyunsu Ju , Min Kyu Yang , Eunmi Kim , Seonggeon Park , Ingyu Baek
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2012-0101870 20120914
- Main IPC: G11C13/00
- IPC: G11C13/00

Abstract:
A method of operating a resistive non-volatile memory can be provided by applying a forming voltage across first and second electrodes of a selected memory cell in the variable resistance non-volatile memory device during an operation to the selected memory cell. The forming voltage can be a voltage level that is limited to less than a breakdown voltage of an insulation film included in selected memory cell between a variable resistance film and one of first electrode. Related devices and materials are also disclosed.
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