公开(公告)号：US20250160030A1

公开(公告)日：2025-05-15

申请号：US18882272

申请日：2024-09-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingyu Baek ,  Soonhyung Hong

IPC: H01L27/146 ,  H04N25/531 ,  H04N25/772 ,  H04N25/78

Abstract: An image sensor includes: a top layer including a photodiode included in a pixel and a transfer transistor configured to transfer an electrical signal generated by the photodiode; a first middle layer under the top layer and bonded to the top layer, wherein the first middle layer includes a plurality of capacitors connected to the transfer transistor through a first output node connected to the transfer transistor, and a plurality of sampling transistors connected to the plurality of capacitors and configured to control the plurality of capacitors; a second middle layer under the first middle layer and bonded to the first middle layer, wherein the second middle layer includes a source-follow transistor connected to the plurality of sampling transistors through a second output node; and a bottom layer under the second middle layer and bonded to the second middle layer, wherein the bottom layer includes an analog-to-digital converter (ADC) circuit configured to process a pixel signal output through the source-follow transistor.

公开(公告)号：US12249610B2

公开(公告)日：2025-03-11

申请号：US17647348

申请日：2022-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiyoun Song ,  Ingyu Baek ,  Daehoon Kim ,  Seungsik Kim

IPC: H01L27/146 ,  H04N25/53 ,  H04N25/77

Abstract: Provided is an image sensor including a semiconductor substrate having first and second surfaces, transistors on the first surface, first and second lower pad electrodes apart from each other on a first interlayer insulating film covering the transistors, a mold insulating layer on the first and second lower pad electrodes, a first lower electrode inside a first opening passing through the mold insulating layer on the first lower pad electrode, a second lower electrode inside a second opening passing through the mold insulating layer on the second lower pad electrode, a dielectric film and an upper electrode on the first and second lower electrodes, a first contact plug passing through the mold insulating layer and connected to the first lower pad electrode, and a second contact plug passing through the mold insulating layer and connected to the second lower pad electrode.

公开(公告)号：US11438535B2

公开(公告)日：2022-09-06

申请号：US16989227

申请日：2020-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingyu Baek ,  Seungsik Kim

IPC: H04N5/359 ,  H04N9/04 ,  H04N5/378 ,  H01L27/146

Abstract: An imaging device includes a pixel array with first and second pixels respectively having first and second conversion gains connected to row and column lines; a row driver determining a selection row line among the row lines; a readout circuit obtaining first and second pixel signals from first and second pixels connected to the selection row line; a column driver generating first and second image data from the first and second pixel signals; and an image signal processor using the first and second image data to generate an object image. The second pixels include an expansion capacitor connected between a floating diffusion node and a ground node. Exposure time of the first pixels is equal to or longer than exposure time of the second pixels. An area of a light receiving region of the first pixels is equal to an area of a light receiving region of the second pixels.

公开(公告)号：US10930685B2

公开(公告)日：2021-02-23

申请号：US16390325

申请日：2019-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Doowon Kwon ,  Ingyu Baek

IPC: H01L27/146 ,  H01L23/522 ,  H01L49/02 ,  H01L27/148 ,  H04N5/232

Abstract: Disclosed is an image sensor comprising a first substrate including a plurality of pixels, a photoelectric conversion region in the first substrate at each of the pixels, a first capacitor on the first substrate, and a shield structure spaced apart from and surrounding the first capacitor.

公开(公告)号：US20210050379A1

公开(公告)日：2021-02-18

申请号：US16821352

申请日：2020-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingyu Baek ,  Doowon Kwon

IPC: H01L27/146 ,  H01L23/00

Abstract: An image sensor is provided. The image sensor includes a first substrate; a plurality of photoelectric conversion units positioned in the first substrate; a first connection layer disposed on the first substrate; a plurality of first pixel pads disposed on the first connection layer; a plurality of first peripheral pads disposed on the first substrate; a plurality of second pixel pads respectively positioned on the plurality of first pixel pads; a plurality of second peripheral pads respectively positioned on the plurality of first peripheral pads; a second connection layer disposed on the plurality of second pixel pads and the plurality of second peripheral pads; a device disposed on the second connection layer; and a second substrate disposed on the second connection layer and the device, wherein a pitch of the plurality of first pixel pads is substantially the same as a pitch of the plurality of pixel regions of the first substrate.

公开(公告)号：US09129675B2

公开(公告)日：2015-09-08

申请号：US14027337

申请日：2013-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ingyu Baek ,  Yeong-Taek Lee ,  KyungMin Kim

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0007 ,  G11C13/004

Abstract: Resistive memory driving methods are provided. The methods may include applying an operating voltage set according to a mode of operation to a selected word line among the plurality of word lines and a selected bit line among the plurality of bit lines within a line delay period.

Abstract translation: 提供了电阻式存储器驱动方法。 所述方法可以包括根据操作模式对在多个字线中的所选字线和行延迟周期内的多个位线中的选定位线之间施加设置的工作电压。

公开(公告)号：US20240258354A1

公开(公告)日：2024-08-01

申请号：US18242597

申请日：2023-09-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungsan Kim ,  Kwansik Kim ,  Jinyong Choi ,  Gayoung Kim ,  Taemin Kim ,  Yongsoon Park ,  Ingyu Baek ,  Seungho Lee

IPC: H01L27/146

CPC classification number: H01L27/14632 ,  H01L27/14603 ,  H01L27/14645

Abstract: An image sensor includes a lower insulating film arranged over a substrate and having a non-flat surface that has a concave-convex shape and includes a first surface, which extends in a horizontal direction parallel to a frontside surface of the substrate, and at least one second surface extending from the first surface toward the substrate, a capacitor arranged on the lower insulating film to contact the non-flat surface of the lower insulating film and conformally covering the non-flat surface of the lower insulating film along the contour of the non-flat surface of the lower insulating film, an upper insulating film covering the capacitor and the lower insulating film, and at least one air gap having a side facing the at least one second surface of the lower insulating film in the horizontal direction and having a height defined by the upper insulating film in a vertical direction.

公开(公告)号：US20240222399A1

公开(公告)日：2024-07-04

申请号：US18380795

申请日：2023-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingyu Baek ,  Kwansik Kim ,  Jungsan Kim ,  Taemin KIM

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/1463 ,  H01L27/14645

Abstract: An image sensor may include a substrate including pixels, a first transistor and a second transistor disposed on the substrate and spaced apart from each other, a first interlayer insulating layer covering the first transistor and the second transistor, a first lower electrode disposed in the first interlayer insulating layer and connected to an end portion of the first transistor, a first dielectric layer on the first lower electrode, a first upper electrode on the first dielectric layer, a second interlayer insulating layer covering the first upper electrode and the first interlayer insulating layer, and a first pillar provided to penetrate the second and first interlayer insulating layers and connected to an end portion of the second transistor.

公开(公告)号：US11652130B2

公开(公告)日：2023-05-16

申请号：US16898212

申请日：2020-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doowon Kwon ,  Ingyu Baek

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14634 ,  H01L27/14636

Abstract: An image sensor includes a first layer including pixels in a pixel array, and a first logic circuit configured to control the pixel array. Each of the pixels include at least one photodiode configured to generate a charge in response to light, and a pixel circuit configured to generate a pixel signal corresponding to the charge. A second layer includes a second logic circuit that is connected to the pixel array and the first logic circuit and is on the first layer. A third layer includes storage elements that are electrically connected to at least one of the pixels or the first logic circuit and an insulating layer on the storage elements. A lower surface of the insulating layer is attached to an upper portion of the first layer, and an upper surface of the insulating layer is attached to a lower portion of the second layer.

公开(公告)号：US20140078812A1

公开(公告)日：2014-03-20

申请号：US14021412

申请日：2013-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunsu Ju ,  Min Kyu Yang ,  Eunmi Kim ,  Seonggeon Park ,  Ingyu Baek

IPC: G11C13/00

CPC classification number: G11C13/0002 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/76

Abstract: A method of operating a resistive non-volatile memory can be provided by applying a forming voltage across first and second electrodes of a selected memory cell in the variable resistance non-volatile memory device during an operation to the selected memory cell. The forming voltage can be a voltage level that is limited to less than a breakdown voltage of an insulation film included in selected memory cell between a variable resistance film and one of first electrode. Related devices and materials are also disclosed.

Abstract translation: 可以通过在对所选择的存储器单元的操作期间将可选择的电阻非易失性存储器件中的所选存储单元的第一和第二电极上的形成电压施加到电阻性非易失性存储器的操作方法来提供。 形成电压可以是被限制为小于可变电阻膜和第一电极中的一个之间的所选存储单元中包括的绝缘膜的击穿电压的电压电平。 还公开了相关的装置和材料。