Invention Grant
- Patent Title: Integration of dense and variable pitch fin structures
- Patent Title (中): 稠密和可变节距鳍结构的集成
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Application No.: US14632313Application Date: 2015-02-26
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Publication No.: US09378972B2Publication Date: 2016-06-28
- Inventor: Kangguo Cheng , Matthew E. Colburn , Bruce B. Doris , Ali Khakifirooz
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Catherine Ivers
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/308 ; H01L27/088 ; H01L21/84 ; H01L27/108 ; H01L29/06 ; H01L27/11
Abstract:
Methods for forming semiconductor devices. Methods for forming fin structures include forming first sidewalls around a first set of mandrels. The first set of mandrels is removed and second sidewalls are formed around the first sidewalls and a second set of mandrels. The first sidewalls and the second set of mandrels are removed and an underlying layer around the second sidewalls is etched.
Public/Granted literature
- US20150170927A1 INTEGRATION OF DENSE AND VARIABLE PITCH FIN STRUCTURES Public/Granted day:2015-06-18
Information query
IPC分类:
