公开(公告)号：US09378972B2

公开(公告)日：2016-06-28

申请号：US14632313

申请日：2015-02-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kangguo Cheng ,  Matthew E. Colburn ,  Bruce B. Doris ,  Ali Khakifirooz

IPC: H01L21/311 ,  H01L21/308 ,  H01L27/088 ,  H01L21/84 ,  H01L27/108 ,  H01L29/06 ,  H01L27/11

CPC classification number: H01L21/3086 ,  H01L21/3088 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/10826 ,  H01L27/1104 ,  H01L29/0657

Abstract: Methods for forming semiconductor devices. Methods for forming fin structures include forming first sidewalls around a first set of mandrels. The first set of mandrels is removed and second sidewalls are formed around the first sidewalls and a second set of mandrels. The first sidewalls and the second set of mandrels are removed and an underlying layer around the second sidewalls is etched.

Abstract translation: 半导体器件形成方法。 形成翅片结构的方法包括围绕第一组心轴形成第一侧壁。 去除第一组心轴，并且在第一侧壁和第二组心轴周围形成第二侧壁。 去除第一侧壁和第二组心轴，并且蚀刻围绕第二侧壁的下层。