Invention Grant
- Patent Title: Method of fabricating multi-wafer image sensor
- Patent Title (中): 制造多晶片图像传感器的方法
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Application No.: US14515307Application Date: 2014-10-15
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Publication No.: US09379159B2Publication Date: 2016-06-28
- Inventor: Yin Qian , Dyson H. Tai , Jin Li , Chen-Wei Lu , Howard E. Rhodes
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146

Abstract:
A method of fabricating an image sensor includes forming a pixel array in an imaging region of a semiconductor substrate and forming a trench in a peripheral region of the semiconductor substrate after forming the pixel array. The peripheral region is on a perimeter of the imaging region. The trench is filled with an insulating material. An interconnect layer is formed after filling the trench with insulating material. A first wafer is bonded to a second wafer. The first wafer includes the interconnect layer and the semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the insulating material. A via cavity is formed through the insulating material. The via cavity extends down to a second interconnect layer of the second wafer. The via cavity is filled with a conductive material to form a via. The insulating material insulates the conductive material from the semiconductor substrate.
Public/Granted literature
- US20160111468A1 METHOD OF FABRICATING MULTI-WAFER IMAGE SENSOR Public/Granted day:2016-04-21
Information query
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