Invention Grant
- Patent Title: Electrostatic discharge diodes and methods of forming electrostatic discharge diodes
- Patent Title (中): 静电放电二极管和形成静电放电二极管的方法
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Application No.: US14805745Application Date: 2015-07-22
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Publication No.: US09379201B2Publication Date: 2016-06-28
- Inventor: Vidhya Ramachandran , Brian Matthew Henderson , Shiqun Gu , Chiew-Guan Tan , Jung Pill Kim , Taehyun Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L29/66 ; H01L23/498 ; H01L29/861 ; H01L21/768 ; H01L29/872 ; H01L21/762 ; H01L29/06 ; H01L27/08 ; H01L21/304 ; H01L23/48 ; H01L23/60 ; H01L27/02 ; H01L27/06 ; H01L23/535 ; H01L25/065 ; H01L23/525
Abstract:
A method includes thinning a back-side of a substrate to expose a portion of a first via that is formed in the substrate. The method also includes forming a first diode at the back-side of the substrate. The first diode is coupled to the first via.
Public/Granted literature
- US20150333053A1 ELECTROSTATIC DISCHARGE DIODE Public/Granted day:2015-11-19
Information query
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