Invention Grant
- Patent Title: Fabrication methods for monolithically isled back contact back junction solar cells
- Patent Title (中): 单片反接触背结太阳能电池的制造方法
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Application No.: US14493341Application Date: 2014-09-22
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Publication No.: US09379258B2Publication Date: 2016-06-28
- Inventor: Pawan Kapur , Anand Deshpande , Virendra V. Rana , Mehrdad M. Moslehi , Sean M. Seutter
- Applicant: Solexel, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Solexel, Inc.
- Current Assignee: Solexel, Inc.
- Current Assignee Address: US CA Milpitas
- Agent John Wood
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/0224 ; H01L31/0216 ; H01L27/142 ; H01L31/05 ; H01L31/068

Abstract:
Fabrication methods for making back contact back junction solar cells. A base dopant source, a field emitter dopant source, and an emitter dopant source are deposited on the back surface of a solar cell substrate. The solar cell substrate is annealed forming emitter contact regions corresponding to the emitter dopant source, field emitter regions corresponding to the field emitter dopant, and base contact regions corresponding to the base dopant source. The base dopant source, field emitter dopant source, and the emitter dopant source are etched. A backside passivation layer is deposited on the back surface of the solar cell. Contacts are opened to the emitter contact regions and the base contact regions through the backside passivation layer. Patterned base metallization and patterned emitter metallization is formed on the back surface of the solar cell with electrical interconnections to the base contact regions and the emitter contact regions.
Public/Granted literature
- US20150171240A1 FABRICATION METHODS FOR MONOLITHICALLY ISLED BACK CONTACT BACK JUNCTION SOLAR CELLS Public/Granted day:2015-06-18
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