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    Solar cell metallization
    4.
    发明授权
    Solar cell metallization 有权

    公开(公告)号：US09911875B2

    公开(公告)日：2018-03-06

    申请号：US14260272

    申请日：2014-04-23

    Applicant: Solexel, Inc.

    Inventor： Swaroop Kommera ,  Pawan Kapur ,  Yen-Sheng Su ,  Vivek Saraswat ,  Anand Deshpande ,  Mehrdad M. Moslehi

    IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/05 ,  H01L31/02

    CPC classification number: H01L31/022441 ,  H01L31/02008 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50

    Abstract: An interdigitated back contact solar cell is provided. The solar cell comprises a solar cell substrate having a light receiving frontside and a backside comprising base and emitter regions. A first level metal (M1) layer is positioned on the substrate backside contacting the base and emitter regions. A second level metal (M2) layer is connected to the first level metal (M1) layer and comprises a base busbar and an emitter busbar. The first level metal comprises substantially orthogonal interdigitated metallization and substantially parallel interdigitated metallization positioned under and corresponding to the base and emitter busbars on the second level metal (M2). The substantially parallel interdigitated metallization of M1 collects carriers of opposite polarity of the corresponding busbar.

    SOLAR CELL METALLIZATION
    7.
    发明申请
    SOLAR CELL METALLIZATION 有权
    太阳能电池金属化

    公开(公告)号：US20150068592A1

    公开(公告)日：2015-03-12

    申请号：US14260272

    申请日：2014-04-23

    Applicant: Solexel, Inc.

    Inventor： Swaroop Kommera ,  Pawan Kapur ,  Yen-Sheng Su ,  Vivek Saraswat ,  Anand Deshpande ,  Mehrdad M. Moslehi

    IPC: H01L31/02

    CPC classification number: H01L31/022441 ,  H01L31/02008 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50

    Abstract: An interdigitated back contact solar cell is provided. The solar cell comprises a solar cell substrate having a light receiving frontside and a backside comprising base and emitter regions. A first level metal (M1) layer is positioned on the substrate backside contacting the base and emitter regions. A second level metal (M2) layer is connected to the first level metal (M1) layer and comprises a base busbar and an emitter busbar. The first level metal comprises substantially orthogonal interdigitated metallization and substantially parallel interdigitated metallization positioned under and corresponding to the base and emitter busbars on the second level metal (M2). The substantially parallel interdigitated metallization of M1 collects carriers of opposite polarity of the corresponding busbar.

    Abstract translation: 提供了交错的背接触太阳能电池。 太阳能电池包括具有光接收前侧的太阳能电池基板和包括基极和发射极区域的背面。 第一级金属（M1）层位于接触基极和发射极区域的衬底背面。 第二级金属（M2）层连接到第一级金属（M1）层，并且包括基极母线和发射极母线。 第一级金属包括位于第二级金属（M2）上的基极和发射极母线之下并对应于基本上正交叉指金属化的基本上平行的叉指金属化。 M1的基本上平行的叉指金属化收集相应母线相反极性的载体。

    Fabrication methods for monolithically isled back contact back junction solar cells
    8.
    发明授权
    Fabrication methods for monolithically isled back contact back junction solar cells 有权
    单片反接触背结太阳能电池的制造方法

    公开(公告)号：US09379258B2

    公开(公告)日：2016-06-28

    申请号：US14493341

    申请日：2014-09-22

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur ,  Anand Deshpande ,  Virendra V. Rana ,  Mehrdad M. Moslehi ,  Sean M. Seutter

    IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/0216 ,  H01L27/142 ,  H01L31/05 ,  H01L31/068

    CPC classification number: H01L31/022441 ,  H01L27/1421 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02245 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50 ,  Y02E10/547

    Abstract: Fabrication methods for making back contact back junction solar cells. A base dopant source, a field emitter dopant source, and an emitter dopant source are deposited on the back surface of a solar cell substrate. The solar cell substrate is annealed forming emitter contact regions corresponding to the emitter dopant source, field emitter regions corresponding to the field emitter dopant, and base contact regions corresponding to the base dopant source. The base dopant source, field emitter dopant source, and the emitter dopant source are etched. A backside passivation layer is deposited on the back surface of the solar cell. Contacts are opened to the emitter contact regions and the base contact regions through the backside passivation layer. Patterned base metallization and patterned emitter metallization is formed on the back surface of the solar cell with electrical interconnections to the base contact regions and the emitter contact regions.

    Abstract translation: 制造接触背面太阳能电池的制造方法。 在太阳能电池基板的背面上沉积基底掺杂剂源，场致发射掺杂源和发射极掺杂源。 对太阳能电池基板进行退火，形成对应于发射极掺杂源的发射极接触区域，对应于场发射极掺杂剂的场发射极区域和对应于基极掺杂剂源极的基极接触区域。 蚀刻基底掺杂剂源，场致发射体掺杂源和发射极掺杂源。 背面钝化层沉积在太阳能电池的背面上。 触点通过背面钝化层向发射极接触区域和基极接触区域开放。 图案化的基底金属化和图案化发射极金属化形成在具有与基极接触区域和发射极接触区域的电互连的太阳能电池的背面上。

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