Invention Grant
- Patent Title: Integrated circuit and semiconductor device including the same
- Patent Title (中): 集成电路和半导体器件包括相同的
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Application No.: US14624646Application Date: 2015-02-18
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Publication No.: US09379705B2Publication Date: 2016-06-28
- Inventor: Dal-Hee Lee , Jae-Woo Seo , Min-Ho Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0112331 20140827
- Main IPC: H03K19/00
- IPC: H03K19/00 ; H03K19/0185 ; H03K19/0944 ; G06F17/50

Abstract:
An integrated circuit (IC) includes at least one unit cell. The at least one unit cell includes a first bit circuit configured to process a first bit signal, a second bit circuit configured to process a second bit signal, a first well spaced apart from boundaries of the at least one unit cell and biased to a first voltage, and a second well biased to a second voltage that is different from the first voltage. Each of the first and second bit circuits includes at least one transistor from among a plurality of transistors disposed in the first well.
Public/Granted literature
- US20150244366A1 INTEGRATED CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2015-08-27
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