公开(公告)号：US09379705B2

公开(公告)日：2016-06-28

申请号：US14624646

申请日：2015-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dal-Hee Lee ,  Jae-Woo Seo ,  Min-Ho Park

IPC: H03K19/00 ,  H03K19/0185 ,  H03K19/0944 ,  G06F17/50

CPC classification number: H03K19/0013 ,  G06F17/5072 ,  H03K19/018507 ,  H03K19/018521 ,  H03K19/0944

Abstract: An integrated circuit (IC) includes at least one unit cell. The at least one unit cell includes a first bit circuit configured to process a first bit signal, a second bit circuit configured to process a second bit signal, a first well spaced apart from boundaries of the at least one unit cell and biased to a first voltage, and a second well biased to a second voltage that is different from the first voltage. Each of the first and second bit circuits includes at least one transistor from among a plurality of transistors disposed in the first well.

Abstract translation: 集成电路（IC）包括至少一个单元电池。 所述至少一个单元单元包括被配置为处理第一位信号的第一位电路，被配置为处理第二位信号的第二位电路，与所述至少一个单位单元的边界间隔开的第一阱，并被偏置到第一位 电压，第二阱偏压到不同于第一电压的第二电压。 第一和第二位电路中的每一个包括设置在第一阱中的多个晶体管中的至少一个晶体管。

公开(公告)号：US09960768B2

公开(公告)日：2018-05-01

申请号：US15178154

申请日：2016-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dal-Hee Lee ,  Jae-Woo Seo ,  Min-Ho Park

IPC: H03K19/00 ,  H03K19/0185 ,  H03K19/0944 ,  G06F17/50

CPC classification number: H03K19/0013 ,  G06F17/5072 ,  H03K19/018507 ,  H03K19/018521 ,  H03K19/0944

Abstract: An integrated circuit (IC) includes at least one unit cell. The at least one unit cell includes a first bit circuit configured to process a first bit signal, a second bit circuit configured to process a second bit signal, a first well spaced apart from boundaries of the at least one unit cell and biased to a first voltage, and a second well biased to a second voltage that is different from the first voltage. Each of the first and second bit circuits includes at least one transistor from among a plurality of transistors disposed in the first well.