Invention Grant
- Patent Title: Three-phase GSHE-MTJ non-volatile flip-flop
- Patent Title (中): 三相GSHE-MTJ非易失性触发器
-
Application No.: US14498336Application Date: 2014-09-26
-
Publication No.: US09384812B2Publication Date: 2016-07-05
- Inventor: Wenqing Wu , Kendrick Hoy Leong Yuen , Karim Arabi
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: G11C11/18
- IPC: G11C11/18 ; G11C11/16 ; H03K3/356 ; H03K3/3562 ; H03K3/45 ; G11C11/155 ; G11C14/00

Abstract:
Systems and methods are directed to a three-phase non-volatile flip-flop (NVFF), which includes a master stage formed from a dual giant spin Hall effect (GSHE)-magnetic tunnel junction (MTJ) structure, with a first GSHE-MTJ and a second GSHE-MTJ coupled between a first combined terminal and a second combined terminal, and a slave stage formed from a first inverter cross-coupled with a second inverter. A first data value is read out from the slave stage during a read phase of the same clock cycle that a second data value is written into the master stage during a write phase. The three-phase NVFF includes three control signals, for controlling an initialization phase of the slave stage, the read phase, and the write phase.
Public/Granted literature
- US20150213868A1 THREE-PHASE GSHE-MTJ NON-VOLATILE FLIP-FLOP Public/Granted day:2015-07-30
Information query