公开(公告)号：US11846730B2

公开(公告)日：2023-12-19

申请号：US16557537

申请日：2019-08-30

Applicant: QUALCOMM Incorporated

Inventor： Volodimir Slobodyanyuk ,  Karim Arabi ,  Evgeni Gousev

IPC: G01S7/4863 ,  G01S7/481 ,  G01S1/42 ,  G02B26/10 ,  G01S17/14 ,  G01S17/06 ,  G01S17/42

CPC classification number: G01S7/4863 ,  G01S7/4816 ,  G01S7/4817 ,  G01S7/4818 ,  G01S17/06 ,  G01S17/14 ,  G01S17/42 ,  G02B26/103

Abstract: Aspects of the disclosure are related to a Lidar device, comprising: a vibrating fiber optic cantilever system on a transmit (TX) path; and a two-dimensional (2D) light sensor array on a receive (RX) path.

公开(公告)号：US08881080B2

公开(公告)日：2014-11-04

申请号：US13725976

申请日：2012-12-21

Applicant: QUALCOMM Incorporated

Inventor： Khusro Sajid ,  Mamta Bansal ,  Karim Arabi

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G06F17/5036

Abstract: Methods and apparatus for Enhanced Static IR Drop Analysis are provided. Enhanced Static IR Drop Analysis can be used to determine a quality and robustness of a power distribution network in a circuit. In examples, Enhanced Static IR Drop Analysis includes recording time points at which global current demand profile peaks, sampling instantaneous current from individual tile-based current demand profiles at each time point, and running Static IR Analysis for the tiles at the time points to determine tile current use by the tiles during the time points. Enhanced Static IR Drop Analysis can be used for quick assessment of peak current distribution and determining how the peak current distribution stresses the power distribution network. Enhanced Static IR Drop Analysis is useful during earlier stages of circuit design, when quickly producing circuit performance data is imperative and conventional techniques require significant resources.

Abstract translation: 提供了增强型静态IR滴分析的方法和装置。 增强型静态红外线掉电分析可用于确定电路中配电网络的质量和鲁棒性。 在示例中，增强型静态红外线掉电分析包括记录全局电流需求曲线峰值的时间点，在每个时间点从基于瓦片的当前需求曲线采集瞬时电流，以及在时间点运行瓦片的静态IR分析，以确定 瓦片当前使用的瓦片在时间点。 增强型静态IR降落分析可用于快速评估峰值电流分布，并确定峰值电流分布如何强调配电网络。 在电路设计的早期阶段，当快速生成电路性能数据是必不可少的并且常规技术需要大量资源时，增强型静态IR分析分析是非常有用的。

公开(公告)号：US10061020B2

公开(公告)日：2018-08-28

申请号：US14859341

申请日：2015-09-20

Applicant: QUALCOMM Incorporated

Inventor： Volodimir Slobodyanyuk ,  Evgeni Petrovich Gousev ,  Karim Arabi

IPC: G01S7/481 ,  G01S17/42 ,  G01S17/87 ,  G01S17/93

CPC classification number: G01S7/4817 ,  G01S17/42 ,  G01S17/87 ,  G01S17/936

Abstract: A light detection and ranging (LIDAR) apparatus includes dual beam scanners with dual beam steering. A first beam scanner in the LIDAR apparatus scans a wider area in one or more of a first plurality of scan patterns, and a second beam scanner in the LIDAR apparatus scans a narrower area in one or more of a second plurality of scan patterns different from the first plurality of scan patterns.

公开(公告)号：US09343369B2

公开(公告)日：2016-05-17

申请号：US14280731

申请日：2014-05-19

Applicant: QUALCOMM Incorporated

Inventor： Yang Du ,  Karim Arabi

IPC: H01L23/48 ,  H01L21/822 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  H01L21/50 ,  H01L27/06

CPC classification number: H01L25/0652 ,  H01L21/50 ,  H01L21/76895 ,  H01L21/8221 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/83 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/0694 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/08146 ,  H01L2224/08147 ,  H01L2224/80006 ,  H01L2224/80896 ,  H01L2224/83125 ,  H01L2224/83895 ,  H01L2224/9202 ,  H01L2225/06524 ,  H01L2225/06555 ,  H01L2225/06593 ,  H01L2924/00014

Abstract: Methods for constructing three dimensional integrated circuits and related systems are disclosed. In one aspect, a first tier is constructed by creating active elements such as transistors on a holding substrate. An interconnection metal layer is created above the active elements. Metal bonding pads are created within the interconnection metal layer. A second tier is also created, either concurrently or sequentially. The second tier is created in much the same manner as the first tier and is then placed on the first tier, such that the respective metal bonding pads align and are bonded one tier to the other. The holding substrate of the second tier is then released. A back side of the second tier is then thinned, such that the back surfaces of the active elements (for example, a back of a gate in a transistor) are exposed. Additional tiers may be added if desired essentially repeating this process.

Abstract translation: 公开了构造三维集成电路及相关系统的方法。 在一个方面，通过在保持基板上产生诸如晶体管的有源元件来构造第一层。 在有源元件上方形成互连金属层。 在互连金属层内形成金属焊盘。 也创建了第二层，并行或顺序。 第二层以与第一层大致相同的方式创建，然后被放置在第一层上，使得相应的金属焊盘对准并且被一层结合到另一层。 然后释放第二层的保持基板。 然后减薄第二层的背面，使得有源元件的背面（例如，晶体管中的栅极的背面）被暴露。 如果需要，可以添加另外的层，基本上重复该过程。

公开(公告)号：US09251883B2

公开(公告)日：2016-02-02

申请号：US14498376

申请日：2014-09-26

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Kendrick Hoy Leong Yuen ,  Karim Arabi

IPC: G11C11/18 ,  G11C11/16 ,  G11C14/00 ,  H03K19/18 ,  H03K3/356 ,  H03K3/59 ,  H03K3/3562

CPC classification number: G11C11/1693 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  G11C14/0081 ,  H03K3/356008 ,  H03K3/35625 ,  H03K3/59 ,  H03K19/18

Abstract: Systems and methods are directed to a single-phase non-volatile flip-flop (NVFF), which includes a master stage formed from a dual giant spin Hall effect (GSHE)-magnetic tunnel junction (MTJ) structure, the dual GSHE-MTJ structure comprising a first GSHE-MTJ and a second GSHE-MTJ coupled between a first combined terminal and a second combined terminal, and a slave stage formed from a first inverter coupled to a second inverter. During a single clock cycle of a clock, a first data value is read out from the slave stage when a clock is in a high state and a second data value is written into the master stage, when the clock is in a low state. The first and second inverters are cross coupled in a latch configuration to hold the first data value as an output, when the clock is in the low state.

Abstract translation: 系统和方法涉及单相非易失性触发器（NVFF），其包括由双巨型旋转霍尔效应（GSHE） - 磁性隧道结（MTJ）结构形成的主级，双GSHE-MTJ 包括耦合在第一组合终端和第二组合终端之间的第一GSHE-MTJ和第二GSHE-MTJ的结构，以及由耦合到第二逆变器的第一逆变器形成的从级。 在时钟的单个时钟周期中，当时钟处于低状态时，当时钟处于高状态并且第二数据值被写入主站时，从从站读出第一数据值。 当时钟处于低电平状态时，第一和第二反相器以锁存配置交叉耦合以将第一数据值保持为输出。

公开(公告)号：US09081932B2

公开(公告)日：2015-07-14

申请号：US13757635

申请日：2013-02-01

Applicant: QUALCOMM Incorporated

Inventor： Hongmei Liao ,  Karim Arabi

IPC: G06F17/50 ,  G01R31/3185 ,  H01L21/66 ,  G06F11/267

CPC classification number: G06F17/5081 ,  G01R31/318558 ,  G06F11/267 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method includes identifying at least a portion of a design of a semiconductor device to be fabricated as a yield sensitive circuit. The method also includes, in response to identifying the yield sensitive circuit, forming a scan chain. Forming the scan chain includes inserting the yield sensitive circuit between a pair of flip flops and connecting the yield sensitive circuit to the pair of flip flops.

Abstract translation: 一种方法包括将待制造的半导体器件的设计的至少一部分识别为屈服敏感电路。 该方法还包括响应于识别屈服敏感电路而形成扫描链。 形成扫描链包括将收益敏感电路插入一对触发器之间，并将收益敏感电路连接到一对触发器。

公开(公告)号：US20150145576A1

公开(公告)日：2015-05-28

申请号：US14331688

申请日：2014-07-15

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Raghu Sagar Madala ,  Kendrick Hoy Leong Yuen ,  Karim Arabi ,  Robert Philip Gilmore

IPC: H03K3/45 ,  H03K19/20 ,  H03K3/012 ,  H03K3/037

CPC classification number: H03K3/45 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/08 ,  H03K19/18 ,  H03K19/20

Abstract: Aspects described herein are related to pipeline circuits employing a Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) element(s) for performing logical operations. In one aspect, a pipeline circuit is disclosed. The pipeline circuit includes a first pipeline stage and a second pipeline stage. The first pipeline stage is configured to store a first bit set and to generate a first charge current representing the first bit set. The second pipeline stage includes a first GSHE MTJ element. The first GSHE MTJ element is configured to set a first bit state for the first logical operation, and has a first threshold current level. The first GSHE MTJ element is configured to generate a first GSHE spin current in response to the first charge current. In this manner, the first GSHE MTJ element is also configured to perform the first logical operation on the first bit set.

Abstract translation: 本文描述的方面涉及采用用于执行逻辑操作的巨型旋转霍尔效应（GSHE）磁性隧道结（MTJ）元件的流水线电路。 一方面，公开了一种流水线电路。 管线电路包括第一流水线阶段和第二流水线阶段。 第一流水线级被配置为存储第一位集合并且生成表示第一位组的第一充电电流。 第二流水线级包括第一GSHE MTJ元件。 第一GSHE MTJ元件被配置为设置第一逻辑运算的第一位状态，并且具有第一阈值电流电平。 第一GSHE MTJ元件被配置为响应于第一充电电流产生第一GSHE自旋电流。 以这种方式，第一GSHE MTJ元件还被配置为对第一位集执行第一逻辑运算。

公开(公告)号：US20160233580A1

公开(公告)日：2016-08-11

申请号：US14615969

申请日：2015-02-06

Applicant: QUALCOMM Incorporated

Inventor： Vladimir Aparin ,  Karim Arabi

IPC: H01Q3/28 ,  H01Q3/26

CPC classification number: H01Q3/28 ,  H01Q3/267 ,  H03G3/3042 ,  H03G3/3052 ,  H04B17/13 ,  H04W52/42 ,  H04W52/52

Abstract: The systems and method described herein provide efficient wireless communication in a millimeter wave (MMW) phased array system. The system may comprise a plurality of antenna elements, each of the plurality of antenna elements coupled to a transceiver and transceiver having at least one power amplifier. The system may further comprise a gain controller configured to enable or disable the transceivers in response to a power detector output indicating that one or more antenna elements are blocked. Disabling certain transceivers of blocked antenna elements enables the power amplifiers associated with the unblocked antenna elements to continue to operate at maximum efficiency.

Abstract translation: 这里描述的系统和方法提供了毫米波（MMW）相控阵列系统中的有效无线通信。 该系统可以包括多个天线元件，多个天线元件中的每一个耦合到具有至少一个功率放大器的收发器和收发器。 系统还可以包括增益控制器，其被配置为响应于指示一个或多个天线元件被阻塞的功率检测器输出来使能或禁用收发器。 阻止阻塞天线元件的某些收发器使得与未阻塞的天线元件相关联的功率放大器能够以最大的效率继续工作。

公开(公告)号：US20160225741A1

公开(公告)日：2016-08-04

申请号：US15095483

申请日：2016-04-11

Applicant: QUALCOMM Incorporated

Inventor： Yang Du ,  Karim Arabi

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L25/0652 ,  H01L21/50 ,  H01L21/76895 ,  H01L21/8221 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L24/83 ,  H01L25/50 ,  H01L27/0688 ,  H01L27/0694 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/08146 ,  H01L2224/08147 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80986 ,  H01L2224/83125 ,  H01L2224/83895 ,  H01L2224/9202 ,  H01L2225/06524 ,  H01L2225/06555 ,  H01L2225/06593 ,  H01L2924/00014

Abstract: Methods for constructing three dimensional integrated circuits and related systems are disclosed. In one aspect, a first tier is constructed by creating active elements such as transistors on a holding substrate. An interconnection metal layer is created above the active elements. Metal bonding pads are created within the interconnection metal layer. A second tier is also created, either concurrently or sequentially. The second tier is created in much the same manner as the first tier and is then placed on the first tier, such that the respective metal bonding pads align and are bonded one tier to the other. The holding substrate of the second tier is then released. A back side of the second tier is then thinned, such that the back surfaces of the active elements (for example, a back of a gate in a transistor) are exposed. Additional tiers may be added if desired essentially repeating this process.

公开(公告)号：US09324402B2

公开(公告)日：2016-04-26

申请号：US14479832

申请日：2014-09-08

Applicant: QUALCOMM Incorporated

Inventor： Wenqing Wu ,  Raghu Sagar Madala ,  Kendrick Hoy Leong Yuen ,  Karim Arabi

IPC: G11C11/16 ,  H01L43/14 ,  G11C11/18

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/14

Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).