Invention Grant
- Patent Title: Cross-point memory single-selection write technique
- Patent Title (中): 交叉点存储器单选写入技术
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Application No.: US14289858Application Date: 2014-05-29
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Publication No.: US09384831B2Publication Date: 2016-07-05
- Inventor: Mase J Taub , Sandeep K. Guliani , Kiran Pangal
- Applicant: Intel Corporation
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Agency: Alpine Technology Law Group LLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00

Abstract:
A system and technique is disclosed for writing data in a cross-point memory. The state of one or more memory cells of the cross-point memory are sensed and then are continued to be selected and left on. It is then determined which of the one or more memory cells are to change state based on incoming user data that is to be written into the one or more memory cells. The one or more memory cells determined to change state and are still selected to be on are then written by applying a write-current pulse to the memory cells. In one exemplary embodiment, the one or more memory cells comprise one or more phase-change-type memory cell devices.
Public/Granted literature
- US20150348627A1 CROSS-POINT MEMORY SINGLE-SELECTION WRITE TECHNIQUE Public/Granted day:2015-12-03
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