Invention Grant
US09384831B2 Cross-point memory single-selection write technique 有权
交叉点存储器单选写入技术

Cross-point memory single-selection write technique
Abstract:
A system and technique is disclosed for writing data in a cross-point memory. The state of one or more memory cells of the cross-point memory are sensed and then are continued to be selected and left on. It is then determined which of the one or more memory cells are to change state based on incoming user data that is to be written into the one or more memory cells. The one or more memory cells determined to change state and are still selected to be on are then written by applying a write-current pulse to the memory cells. In one exemplary embodiment, the one or more memory cells comprise one or more phase-change-type memory cell devices.
Public/Granted literature
Information query
Patent Agency Ranking
0/0