Invention Grant
US09384986B2 Dual-metal gate CMOS devices and method for manufacturing the same
有权
双金属栅极CMOS器件及其制造方法
- Patent Title: Dual-metal gate CMOS devices and method for manufacturing the same
- Patent Title (中): 双金属栅极CMOS器件及其制造方法
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Application No.: US14396845Application Date: 2012-05-17
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Publication No.: US09384986B2Publication Date: 2016-07-05
- Inventor: Huaxiang Yin , Zuozhen Fu , Qiuxia Xu , Dapeng Chen
- Applicant: Huaxiang Yin , Zuozhen Fu , Qiuxia Xu , Dapeng Chen
- Applicant Address: CN Beijing
- Assignee: NSITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee: NSITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee Address: CN Beijing
- Agency: VLP Law Group LLP
- Agent Enshan Hong
- Priority: CN201210129587 20120427
- International Application: PCT/CN2012/075685 WO 20120517
- International Announcement: WO2013/159414 WO 20131031
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/66 ; H01L21/8238 ; H01L21/8234 ; H01L27/092 ; H01L29/51
Abstract:
A method for manufacturing a dual metal CMOS device comprising: forming a first type metal work function modulation layer in the first gate trench and the second gate trench; forming a second type work function metal diffusion source layer in the first gate trench and the second gate trench; forming a heat isolation layer that shields the region of the first type device; and thermally annealing the regions where the first type device and the second type device are located.
Public/Granted literature
- US20150102416A1 DUAL-METAL GATE CMOS DEVICES AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-04-16
Information query
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