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US09385009B2 Semiconductor device and method of forming stacked vias within interconnect structure for Fo-WLCSP 有权
用于Fo-WLCSP的互连结构内形成堆叠通孔的半导体器件和方法

Semiconductor device and method of forming stacked vias within interconnect structure for Fo-WLCSP
摘要：
A semiconductor device has a semiconductor die mounted to a carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A first insulating layer is formed over the encapsulant and semiconductor die. First vias are formed through the first insulating layer to expose contact pads of the semiconductor die. A first conductive layer is formed over the first insulating layer and into the first vias to electrically connect to the contact pads of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. Second vias are formed through the second insulating layer by laser direct ablation and aligned or offset with the first vias to expose the first conductive layer. A second conductive layer is formed over the second insulating layer and into the second vias. Conductive vias can be formed through the encapsulant.
摘要（中）：

半导体器件具有安装到载体上的半导体管芯。 密封剂沉积在半导体管芯和载体上。 载体被移除。 在密封剂和半导体管芯上形成第一绝缘层。 通过第一绝缘层形成第一通孔以暴露半导体管芯的接触焊盘。 第一导电层形成在第一绝缘层上并且形成在第一通孔中，以电连接到半导体管芯的接触焊盘。 在第一绝缘层和第一导电层上形成第二绝缘层。 通过激光直接消融通过第二绝缘层形成第二通孔，并与第一通孔对准或偏移以暴露第一导电层。 第二导电层形成在第二绝缘层上并进入第二通孔中。 可以通过密封剂形成导电孔。

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