公开(公告)号：US09168515B2

公开(公告)日：2015-10-27

申请号：US13321056

申请日：2011-04-02

Applicant: Ye Wang ,  Jincan Kang ,  Lei Zhang ,  Qinghong Zhang ,  Kang Cheng ,  Qingge Zhai ,  Jiansheng Ding ,  Weiqi Hua ,  Yinchuan Lou

Inventor： Ye Wang ,  Jincan Kang ,  Lei Zhang ,  Qinghong Zhang ,  Kang Cheng ,  Qingge Zhai ,  Jiansheng Ding ,  Weiqi Hua ,  Yinchuan Lou

IPC: B01J29/06 ,  B01J29/80 ,  B01J29/18 ,  B01J29/16 ,  B01J29/26 ,  B01J29/40 ,  B01J29/70 ,  B01J29/78 ,  B01J29/072 ,  C10L1/04 ,  C10G2/00 ,  B01J29/14 ,  B01J29/24 ,  B01J29/46 ,  B01J29/48 ,  B01J29/76 ,  B01J37/18 ,  B01J29/08 ,  B01J29/22 ,  B01J29/44 ,  B01J35/02 ,  B01J37/00 ,  C01B39/40 ,  C01B39/48

CPC classification number: B01J29/80 ,  B01J29/072 ,  B01J29/088 ,  B01J29/146 ,  B01J29/166 ,  B01J29/185 ,  B01J29/22 ,  B01J29/24 ,  B01J29/26 ,  B01J29/405 ,  B01J29/44 ,  B01J29/46 ,  B01J29/48 ,  B01J29/7007 ,  B01J29/7038 ,  B01J29/7057 ,  B01J29/7088 ,  B01J29/7615 ,  B01J29/7676 ,  B01J29/7815 ,  B01J29/7876 ,  B01J35/023 ,  B01J37/0036 ,  B01J37/18 ,  B01J2229/38 ,  C01B39/40 ,  C01B39/48 ,  C10G2/332 ,  C10G2/334 ,  C10G2300/70 ,  C10G2400/02 ,  C10L1/04

Abstract: The invention relates to a catalyst for selective synthesis of high-quality gasoline fractions from syngas and the preparation method of the catalyst. This catalyst consists of cobalt, a promoter and molecular sieve, wherein cobalt is presented in an amount of 1-30%, the promoter is represented in an amount of 0.01-5% and the balance is molecular sieve based on the weight of the catalyst. This catalyst provides superior selectivity for C5-C11 isoparaffins and relatively lower selectivity for wax-type hydrocarbons with more than 20 carbon atoms. Thereof, this catalyst can be used for the synthesis of high-quality gasoline and is good at preventing catalyst coking. Besides, the invention provides a preparation method of the catalyst.

Abstract translation: 本发明涉及用于从合成气中选择性合成高品质汽油馏分的催化剂及其制备方法。 该催化剂由钴，助催化剂和分子筛组成，其中钴的含量为1-30％，助催化剂的含量为0.01-5％，余量为基于催化剂重量的分子筛 。 该催化剂为C5-C11异链烷烃提供了优异的选择性，并且具有超过20个碳原子的蜡型烃具有较低的选择性。 因此，该催化剂可用于合成优质汽油，并且有效地防止催化剂焦化。 此外，本发明提供了催化剂的制备方法。

公开(公告)号：US08836038B2

公开(公告)日：2014-09-16

申请号：US12883241

申请日：2010-09-16

Applicant: Yong-Tian Hou ,  Peng-Fu Hsu ,  Jin Ying ,  Kang-Cheng Lin ,  Kuo-Tai Huang ,  Tze-Liang Lee

Inventor： Yong-Tian Hou ,  Peng-Fu Hsu ,  Jin Ying ,  Kang-Cheng Lin ,  Kuo-Tai Huang ,  Tze-Liang Lee

IPC: H01L29/78 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L21/823842 ,  H01L21/28044 ,  H01L21/28088 ,  H01L21/823835 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7833 ,  H01L29/7843

Abstract: A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a first MOS device of a first conductivity type and a second MOS device of a second conductivity type opposite the first conductivity type. The first MOS device includes a first gate dielectric on a semiconductor substrate; a first metal-containing gate electrode layer over the first gate dielectric; and a silicide layer over the first metal-containing gate electrode layer. The second MOS device includes a second gate dielectric on the semiconductor substrate; a second metal-containing gate electrode layer over the second gate dielectric; and a contact etch stop layer having a portion over the second metal-containing gate electrode layer, wherein a region between the portion of the contact etch stop layer and the second metal-containing gate electrode layer is substantially free from silicon.

Abstract translation: 提供半导体结构及其形成方法。 半导体结构包括第一导电类型的第一MOS器件和与第一导电类型相反的第二导电类型的第二MOS器件。 第一MOS器件包括在半导体衬底上的第一栅极电介质; 在所述第一栅极电介质上的第一含金属的栅电极层; 以及位于第一含金属栅电极层上的硅化物层。 第二MOS器件包括半导体衬底上的第二栅极电介质; 在所述第二栅极电介质上方的第二含金属的栅电极层; 以及具有位于所述第二含金属栅电极层上的部分的接触蚀刻停止层，其中所述接触蚀刻停止层的所述部分和所述第二含金属栅电极层之间的区域基本上不含硅。

公开(公告)号：US08541264B2

公开(公告)日：2013-09-24

申请号：US13548039

申请日：2012-07-12

Applicant: Jian-Hong Lin ,  Kang-Cheng Lin ,  Tzu-Li Lee

Inventor： Jian-Hong Lin ,  Kang-Cheng Lin ,  Tzu-Li Lee

IPC: H01L21/82

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a semiconductor structure is provided to prevent energy that is used to blow at least one fuse formed on a metal layer above a semiconductor substrate from causing damage on the structure. The semiconductor structure includes a device, guard ring, protection ring, and at least one protection layer. The device is constructed on the semiconductor substrate underneath the fuse. A seal ring, which surrounds the fuse, is constructed on at least one metal layer between the device and the fuse for confining the energy therein. The protection layer is formed within the seal ring, on at least one metal layer between the device and the fuse for shielding the device from being directly exposed to the energy.

Abstract translation: 提供一种用于形成半导体结构的方法，以防止用于吹送形成在半导体衬底上的金属层上的至少一个熔丝的能量引起对结构的损坏。 半导体结构包括器件，保护环，保护环和至少一个保护层。 该器件构造在保险丝下方的半导体衬底上。 围绕熔丝的密封环构造在设备和保险丝之间的至少一个金属层上，以将能量限制在其中。 保护层形成在密封环内，在设备和保险丝之间的至少一个金属层上，用于屏蔽器件不会直接暴露于能量。

公开(公告)号：US08450161B2

公开(公告)日：2013-05-28

申请号：US13465551

申请日：2012-05-07

Applicant: Chien-Hao Chen ,  Hao-Ming Lien ,  Ssu-Yu Li ,  Jun-Lin Yeh ,  Kang-Cheng Lin ,  Kuo-Tai Huang ,  Chii-Horng Li ,  Chien-Liang Chen ,  Chung-Hau Fei ,  Wen-Chih Yang ,  Jin-Aun Ng ,  Chi Hsin Chang ,  Chun Ming Lin ,  Harry Chuang

Inventor： Chien-Hao Chen ,  Hao-Ming Lien ,  Ssu-Yu Li ,  Jun-Lin Yeh ,  Kang-Cheng Lin ,  Kuo-Tai Huang ,  Chii-Horng Li ,  Chien-Liang Chen ,  Chung-Hau Fei ,  Wen-Chih Yang ,  Jin-Aun Ng ,  Chi Hsin Chang ,  Chun Ming Lin ,  Harry Chuang

IPC: H01L21/00 ,  H01L21/02

CPC classification number: H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor substrate and a transistor formed in the substrate. The transistor includes a gate stack having a high-k dielectric and metal gate, a sealing layer formed on sidewalls of the gate stack, the sealing layer having an inner edge and an outer edge, the inner edge interfacing with the sidewall of the gate stack, a spacer formed on the outer edge of the sealing layer, and a source/drain region formed on each side of the gate stack, the source/drain region including a lightly doped source/drain (LDD) region that is aligned with the outer edge of the sealing layer.

Abstract translation: 本公开提供一种半导体器件，其包括半导体衬底和形成在衬底中的晶体管。 晶体管包括具有高k电介质和金属栅极的栅极堆叠，形成在栅极叠层的侧壁上的密封层，密封层具有内边缘和外边缘，内边缘与栅叠层的侧壁相接合 ，形成在密封层的外边缘上的隔离物和形成在栅极堆叠的每一侧上的源极/漏极区域，源极/漏极区域包括与外部电极对准的轻掺杂源极/漏极（LDD）区域 密封层的边缘。

公开(公告)号：US20120276732A1

公开(公告)日：2012-11-01

申请号：US13548039

申请日：2012-07-12

Applicant: Jian-Hong Lin ,  Kang-Cheng Lin ,  Tzu-Li Lee

Inventor： Jian-Hong Lin ,  Kang-Cheng Lin ,  Tzu-Li Lee

IPC: H01L21/768

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a semiconductor structure is provided to prevent energy that is used to blow at least one fuse formed on a metal layer above a semiconductor substrate from causing damage on the structure. The semiconductor structure includes a device, guard ring, protection ring, and at least one protection layer. The device is constructed on the semiconductor substrate underneath the fuse. A seal ring, which surrounds the fuse, is constructed on at least one metal layer between the device and the fuse for confining the energy therein. The protection layer is formed within the seal ring, on at least one metal layer between the device and the fuse for shielding the device from being directly exposed to the energy.

Abstract translation: 提供一种用于形成半导体结构的方法，以防止用于吹送形成在半导体衬底上的金属层上的至少一个熔丝的能量引起对结构的损坏。 半导体结构包括器件，保护环，保护环和至少一个保护层。 该器件构造在保险丝下方的半导体衬底上。 围绕熔丝的密封环构造在设备和保险丝之间的至少一个金属层上，以将能量限制在其中。 保护层形成在密封环内，在设备和保险丝之间的至少一个金属层上，用于屏蔽器件不会直接暴露于能量。

公开(公告)号：US20120049216A1

公开(公告)日：2012-03-01

申请号：US12898945

申请日：2010-10-06

Applicant: YI-SHENG TING ,  WEI-KANG CHENG ,  SHYI-MING PAN

Inventor： YI-SHENG TING ,  WEI-KANG CHENG ,  SHYI-MING PAN

IPC: H01L33/50

CPC classification number: H01L25/0753 ,  H01L33/504 ,  H01L2224/14 ,  H01L2224/48095 ,  H01L2224/49107 ,  H01L2924/0002 ,  H05B33/0806

Abstract: The present invention provides an alternating current light-emitting diode (AC LED), which uses a light compensation layer disposed on the light-emitting surface of the AC LED. The materials of the light compensation layer can be phosphorescent or fluorescent materials. The light-emitting mechanism is mainly the light-emitting mechanism of electron-hole pairs in a triplet state. By absorbing light of the AC LED, the flashes occurred when the power of the AC LED alters from a positive half-cycle to a negative one can be compensated. Thereby, the AC LED can emit light full-timely.

Abstract translation: 本发明提供了一种交流发光二极管（AC LED），其使用设置在AC LED的发光表面上的光补偿层。 光补偿层的材料可以是磷光或荧光材料。 发光机构主要是三重态的电子 - 空穴对的发光机构。 通过吸收交流LED的光，当AC LED的功率从正半周期变化到负的周期时，会发生闪烁。 因此，交流LED可以全面发光。

公开(公告)号：US08053797B2

公开(公告)日：2011-11-08

申请号：US12234652

申请日：2008-09-20

Applicant: Wei-Kang Cheng ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Yin-Cheng Chu ,  Kuo-Chin Huang

Inventor： Wei-Kang Cheng ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Yin-Cheng Chu ,  Kuo-Chin Huang

IPC: H01L33/00

CPC classification number: H01L33/46 ,  H01L33/64

Abstract: The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices.

Abstract translation: 本发明提供一种具有反射层的发光装置和反射层的结构。 反射层包括各种介电材料。 反射层包括多个电介质层。 除了两种材料类型和两种厚度的组合之外，多个电介质层的材料具有两种或更多种类型，具有两种或更多种厚度，用于形成具有各种结构的反射层。 根据本发明的反射层可以应用于各种类型的发光二极管，以形成新的发光器件。 由于反射率优异，因此能够提高发光元件的发光效率。

公开(公告)号：US20110232741A1

公开(公告)日：2011-09-29

申请号：US13028503

申请日：2011-02-16

Applicant: TING FANG ,  KANG-CHENG LIN

Inventor： TING FANG ,  KANG-CHENG LIN

IPC: H01L31/0224

CPC classification number: H01L31/02245 ,  H01L31/068 ,  Y02E10/547

Abstract: The present invention discloses a silicon solar cell including a silicon crystal, an emitter, a conductive layer, and a first metal electrode. The silicon crystal has at least one through hole formed thereon. The emitter covers at least the silicon crystal and an inner surface of the through hole on the silicon crystal; the conductive layer covers at least a portion of the emitter that is located on the inner surface of the through hole; and the first metal electrode is located in the through hole on the silicon crystal and is electrically connected at least to the conductive layer.

Abstract translation: 本发明公开了一种包括硅晶体，发射极，导电层和第一金属电极的硅太阳能电池。 硅晶体具有形成在其上的至少一个通孔。 发射极至少覆盖硅晶体和硅晶体上的通孔的内表面; 导电层覆盖位于通孔内表面上的发射体的至少一部分; 并且第一金属电极位于硅晶体的通孔中，并且至少与导电层电连接。

公开(公告)号：US20100270566A1

公开(公告)日：2010-10-28

申请号：US12543681

申请日：2009-08-19

Applicant: Wei-Kang CHENG ,  Yi-Sheng Ting ,  Shyi-Ming Pan

Inventor： Wei-Kang CHENG ,  Yi-Sheng Ting ,  Shyi-Ming Pan

IPC: H01L33/00

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/507 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting device with selective reflection function being applied to general light emitting device and AC-type light emitting device is revealed. The light emitting device includes at least one vertical light emitting unit, at least one selective reflection layer and a phosphor layer. The selective reflection layer is disposed over the vertical light emitting unit and the phosphor layer is arranged over the selective reflection layer. Thus first colored light from the vertical light emitting unit passes the selective reflection layer and then to be converted into second colored light by the phosphor layer. The selective reflection layer reflects the second colored light while the first colored light is mixed with the second colored light to form mixing colored light. By the selective reflection layer that prevents the second colored light emitting into the light emitting unit, the lighting efficiency of the light emitting device is enhanced.

Abstract translation: 具有选择反射功能的发光装置被应用于一般的发光装置和AC型发光装置。 发光器件包括至少一个垂直发光单元，至少一个选择反射层和荧光体层。 选择反射层设置在垂直发光单元上方，荧光层设置在选择反射层上。 因此，来自垂直发光单元的第一着色光通过选择反射层，然后被荧光体层转换成第二色光。 选择反射层反射第二有色光，同时第一着色光与第二有色光混合，形成混色色光。 通过防止第二有色光发射到发光单元中的选择性反射层，提高了发光装置的发光效率。

公开(公告)号：US20100081220A1

公开(公告)日：2010-04-01

申请号：US12552368

申请日：2009-09-02

Applicant: Wei-Kang Cheng ,  Jia-Lin Li ,  Shyi-Ming Pan ,  Kuo-Chin Huang

Inventor： Wei-Kang Cheng ,  Jia-Lin Li ,  Shyi-Ming Pan ,  Kuo-Chin Huang

IPC: H01L21/56

CPC classification number: H01L25/0753 ,  H01L33/486 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/56 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a light-emitting diode (LED) and a method for manufacturing the same. The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract translation: 本发明涉及发光二极管（LED）及其制造方法。 LED包括LED管芯，一个或多个金属焊盘和荧光层。 本发明的特征包括为了方便后续的布线和包装过程，将金属垫留下来露出。 此外，本发明提供的LED是单一的混合芯片，其可以直接包装而不需要在包装胶上涂布荧光粉。 由于荧光层和包装胶不是同时处理并且具有不同的材料，所以可以有效地降低封装LED中的应力问题。