Invention Grant
US09390778B2 Semiconductor memory devices and memory systems including the same
有权
半导体存储器件和包括其的存储器系统
- Patent Title: Semiconductor memory devices and memory systems including the same
- Patent Title (中): 半导体存储器件和包括其的存储器系统
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Application No.: US14798164Application Date: 2015-07-13
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Publication No.: US09390778B2Publication Date: 2016-07-12
- Inventor: Su-A Kim , Dae-Sun Kim , Dae-Jeong Kim , Sung-Min Ryu , Kwang-Il Park , Chul-Woo Park , Young-Soo Sohn , Jae-Youn Youn
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0111310 20140826
- Main IPC: G11C8/12
- IPC: G11C8/12 ; G11C8/08 ; G11C7/02 ; G11C7/18 ; G11C7/10

Abstract:
A semiconductor memory device includes a memory cell array, sub word-line drivers and power selection switches. The memory cell array includes memory cell rows coupled to word lines. The sub word line drivers are coupled to the word lines. The power selection switches are coupled to the sub word-line drivers. Each power selection switch controls a deactivation voltage level of a first word-line activated from the word-lines and an off-voltage level of a second word line adjacent to the first word line so that the deactivation voltage level and the off-voltage level have at least one of a ground voltage, a first negative voltage and a second negative voltage. The ground voltage, the first negative voltage and the second negative voltage have different voltage levels from each other.
Public/Granted literature
- US20160064056A1 SEMICONDUCTOR MEMORY DEVICES AND MEMORY SYSTEMS INCLUDING THE SAME Public/Granted day:2016-03-03
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