Invention Grant
- Patent Title: System and method of sensing a memory cell
- Patent Title (中): 感测存储单元的系统和方法
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Application No.: US13835251Application Date: 2013-03-15
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Publication No.: US09390779B2Publication Date: 2016-07-12
- Inventor: Seong-Ook Jung , Taehui Na , Jisu Kim , Seung H. Kang , Jung Pill Kim
- Applicant: QUALCOMM Incorporated , Industry-Academic Cooperation Foundation, Yonsei University
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group
- Main IPC: G06F11/22
- IPC: G06F11/22 ; G06F17/50 ; G11C11/16 ; G11C13/00 ; G11C27/02
Abstract:
A method includes sensing a state of a data cell to generate a data voltage. The state of the data cell corresponds to a state of a programmable resistance based memory element of the data cell. The method further includes sensing a state of a reference cell to generate a reference voltage. The state of the data cell and the state of the reference cell are sensed via a common sensing path. The method further includes determining a logic value of the data cell based on the data voltage and the reference voltage.
Public/Granted literature
- US20140269031A1 SYSTEM AND METHOD OF SENSING A MEMORY CELL Public/Granted day:2014-09-18
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