Invention Grant
US09391158B2 Method of fabricating semiconductor device having high-k gate insulation films including work function adjusting material 有权
制造具有包括功函调整材料的高k栅极绝缘膜的半导体器件的方法

Method of fabricating semiconductor device having high-k gate insulation films including work function adjusting material
Abstract:
A semiconductor device having high-k gate insulation films and a method of fabricating the semiconductor device are provided. The semiconductor device includes a first gate insulation film on a substrate and the first gate insulation film includes a material selected from the group consisting of HfO2, ZrO2, Ta2O5, TiO2, SrTiO3 and (Ba,Sr)TiO3, and lanthanum (La). Additionally, the semiconductor device includes a first barrier film on the first gate insulation film, a first gate electrode on the first barrier film, and n-type source/drain regions in the substrate at both sides of the first gate electrode.
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