Invention Grant
- Patent Title: Semiconductor devices having insulating substrates and methods of formation thereof
- Patent Title (中): 具有绝缘基板的半导体器件及其形成方法
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Application No.: US14188112Application Date: 2014-02-24
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Publication No.: US09391263B2Publication Date: 2016-07-12
- Inventor: Carsten von Koblinski , Volker Strutz , Manfred Engelhardt
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L43/04 ; H01L21/78 ; H01L21/84 ; H01L27/12 ; H01L27/22 ; H01L43/06 ; H01L43/12 ; H01L23/00 ; H01L43/14
Abstract:
In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.
Public/Granted literature
- US20140167192A1 Semiconductor Devices Having Insulating Substrates and Methods of Formation Thereof Public/Granted day:2014-06-19
Information query
IPC分类:
