Invention Grant
US09396900B2 Radio frequency (RF) power coupling system utilizing multiple RF power coupling elements for control of plasma properties
有权
射频（RF）功率耦合系统利用多个RF功率耦合元件来控制等离子体性质
- Patent Title: Radio frequency (RF) power coupling system utilizing multiple RF power coupling elements for control of plasma properties
- Patent Title (中): 射频（RF）功率耦合系统利用多个RF功率耦合元件来控制等离子体性质
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Application No.: US13676265Application Date: 2012-11-14
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Publication No.: US09396900B2Publication Date: 2016-07-19
- Inventor: Barton Lane , Lee Chen , Peter L. G. Ventzek , Merritt Funk , Jianping Zhao , Radha Sundararajan
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01J7/24
- IPC: H01J7/24 ; H05B31/26 ; H01J1/00 ; H01J37/32 ; H05H1/46
Abstract:
A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase.
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