发明授权
US09396946B2 Wet chemistry processes for fabricating a semiconductor device with increased channel mobility
有权
用于制造具有增加的沟道迁移率的半导体器件的湿化学工艺
- 专利标题: Wet chemistry processes for fabricating a semiconductor device with increased channel mobility
- 专利标题(中): 用于制造具有增加的沟道迁移率的半导体器件的湿化学工艺
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申请号: US13229266申请日: 2011-09-09
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公开(公告)号: US09396946B2公开(公告)日: 2016-07-19
- 发明人: Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Erik Maki , Jason Gurganus , Daniel Jenner Lichtenwalner
- 申请人: Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Erik Maki , Jason Gurganus , Daniel Jenner Lichtenwalner
- 申请人地址: US NC Durham
- 专利权人: Cree, Inc.
- 当前专利权人: Cree, Inc.
- 当前专利权人地址: US NC Durham
- 代理商 Anthony J. Josephson
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205 ; H01L21/04 ; H01L21/02 ; H01L29/51 ; H01L29/739 ; H01L29/78 ; H01L29/06 ; H01L29/16
摘要:
Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.