发明授权
US09397093B2 Three dimensional NAND device with semiconductor, metal or silicide floating gates and method of making thereof
有权
具有半导体，金属或硅化物浮栅的三维NAND器件及其制造方法
- 专利标题： Three dimensional NAND device with semiconductor, metal or silicide floating gates and method of making thereof
- 专利标题（中）： 具有半导体，金属或硅化物浮栅的三维NAND器件及其制造方法
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申请号： US13762988申请日： 2013-02-08
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公开(公告)号： US09397093B2公开(公告)日： 2016-07-19
- 发明人: Raghuveer S. Makala , Johann Alsmeier
- 申请人： SanDisk Technologies, Inc.
- 申请人地址： US TX Plano
- 专利权人： SANDISK TECHNOLOGIES INC.
- 当前专利权人： SANDISK TECHNOLOGIES INC.
- 当前专利权人地址： US TX Plano
- 代理机构： The Marbury Law Group PLLC
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L27/088 ; H01L29/66 ; H01L21/8239 ; H01L21/28 ; H01L21/822 ; H01L29/788 ; H01L27/115
摘要：
A method of making a monolithic three dimensional NAND string includes forming a stack of alternating layers of a first material and a second material, etching the stack to form a front side opening in the stack, selectively forming a plurality of discrete semiconductor, metal or silicide charge storage regions on portions of the second material layers exposed in the front side opening, forming a tunnel dielectric layer and semiconductor channel layer in the front side opening, etching the stack to form a back side opening in the stack, removing at least a portion of the second material layers through the back side opening to form back side recesses between the first material layers, forming a blocking dielectric in the back side recesses through the back side opening, and forming control gates over the blocking dielectric in the back side recesses through the back side opening.
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