A carrier for carrying a semiconductor layer having a growth surface and at least one nano-patterned structure on the growth surface is provided. The at least one nano-patterned structure on the growth surface of the carrier has a plurality of mesas, a recess is formed between two adjacent mesas, in which a depth of the recess ranges from 10 nm to 500 nm, and a dimension of the mesa ranges from 10 nm to 800 nm.