Invention Grant
- Patent Title: Frequency doubler
- Patent Title (中): 倍频器
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Application No.: US14571944Application Date: 2014-12-16
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Publication No.: US09397644B2Publication Date: 2016-07-19
- Inventor: Woo-Seok Kim , Tae-Ik Kim , Ji-Hyun Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello LLP
- Priority: KR10-2014-0106070 20140814
- Main IPC: H03B19/00
- IPC: H03B19/00 ; H03K5/00 ; H03K19/21

Abstract:
A frequency doubler includes a voltage controlled oscillator outputting N (where, N is a natural number) signals having a first period and having different phases, and an XOR circuit receiving the N signals and outputting a signal having a second period that corresponds to a half of the first period, wherein the voltage controlled oscillator includes N nodes that correspond to the N signals and inverter units respectively connecting the N nodes, the N nodes are arranged so that, if a signal that starts from any one start node of the N nodes passes through the same number of the inverter units, it recurs to the corresponding start node, the XOR gate includes a first unit block set including N unit blocks that are connected to the same output node and match the N nodes in a one-to-one manner, and a second unit block set that is substantially the same as the first unit block set, wherein the first and second unit block sets share the output node.
Public/Granted literature
- US20160049927A1 FREQUENCY DOUBLER Public/Granted day:2016-02-18
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