Invention Grant
- Patent Title: Method of overlay in extreme ultra-violet (EUV) lithography
- Patent Title (中): 在极紫外(EUV)光刻中覆盖的方法
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Application No.: US14029844Application Date: 2013-09-18
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Publication No.: US09405204B2Publication Date: 2016-08-02
- Inventor: Chia-Ching Huang , Chia-Hao Hsu , Chia-Chen Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: G03B27/58
- IPC: G03B27/58 ; G03F7/20 ; H01L21/683

Abstract:
Some embodiments of the present disclosure relate to a method of overlay control which utilizes a deformable electrostatic chuck. The method comprises exposing a substrate to radiation which is reflected off of a reticle. The reticle is mounted to a deformable electrostatic chuck by a plurality of raised contacts, where each raised contact is configured to independently vary in height from a surface of the deformable electrostatic chuck. After exposure of the substrate to radiation which is reflected off of the reticle, a displacement between a first alignment shape formed on a first layer disposed on a surface of the substrate and a second alignment shape formed by the exposure is measured. The height of one or more of the plurality of raised contact is changed based upon the displacement to alter a surface topology of the reticle, which negates some effects of clamping topology. Other embodiments are also disclosed.
Public/Granted literature
- US20150077733A1 Method of Overlay In Extreme Ultra-Violet (EUV) Lithography Public/Granted day:2015-03-19
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