Invention Grant
- Patent Title: Memory cell including transistor and capacitor
- Patent Title (中): 存储单元包括晶体管和电容
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Application No.: US14577491Application Date: 2014-12-19
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Publication No.: US09406348B2Publication Date: 2016-08-02
- Inventor: Yukio Maehashi
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2013-268614 20131226
- Main IPC: G11C5/06
- IPC: G11C5/06 ; H01L27/11 ; G11C11/24 ; G11C7/10

Abstract:
A semiconductor storage device capable of performing low-voltage operation, reducing standby current, and decreasing memory size is provided. The semiconductor storage device is a semiconductor device including first to fourth transistors and a capacitor. The first transistor has a function of supplying a first signal to the capacitor. The capacitor has a function of accumulating electric charge based on the first signal. The second transistor has a function of supplying the electric charge based on the first signal to a gate of the third transistor. The third transistor has a function of outputting a first potential to a wiring and a function of supplying the first potential to a gate of the fourth transistor. The fourth transistor has a function of supplying a second potential to the capacitor through the second transistor.
Public/Granted literature
- US20150187778A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-07-02
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