Invention Grant
US09406393B2 Nonvolatile memory devices and program verification methods using one verification voltage to verify memory cells having different target states
有权
非易失性存储器件和使用一个验证电压来验证具有不同目标状态的存储器单元的程序验证方法
- Patent Title: Nonvolatile memory devices and program verification methods using one verification voltage to verify memory cells having different target states
- Patent Title (中): 非易失性存储器件和使用一个验证电压来验证具有不同目标状态的存储器单元的程序验证方法
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Application No.: US14668043Application Date: 2015-03-25
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Publication No.: US09406393B2Publication Date: 2016-08-02
- Inventor: Ilhan Park , Ji-Suk Kim , Jung-Ho Song , Yang-Lo Ahn
- Applicant: Ilhan Park , Ji-Suk Kim , Jung-Ho Song , Yang-Lo Ahn
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0110864 20140825
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/34 ; G11C16/10 ; G11C16/08
Abstract:
A program verification method is for a nonvolatile memory device which programs a plurality of memory cells. The program verification method includes applying a plurality of verification voltages, and determining whether programming of memory cells, having different target threshold voltage distributions, from among the plurality of memory cells is completed based on one of the plurality of verification voltages.
Public/Granted literature
- US20160055919A1 NONVOLATILE MEMORY DEVICES AND PROGRAM VERIFICATION METHODS Public/Granted day:2016-02-25
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