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1.发明授权Nonvolatile memory devices and program verification methods using one verification voltage to verify memory cells having different target states 有权非易失性存储器件和使用一个验证电压来验证具有不同目标状态的存储器单元的程序验证方法公开(公告)号：US09406393B2
公开(公告)日：2016-08-02
申请号：US14668043
申请日：2015-03-25
Applicant: Ilhan Park , Ji-Suk Kim , Jung-Ho Song , Yang-Lo Ahn
Inventor： Ilhan Park , Ji-Suk Kim , Jung-Ho Song , Yang-Lo Ahn
CPC classification number: G11C16/3459 , G11C11/5628 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C2211/5621
Abstract: A program verification method is for a nonvolatile memory device which programs a plurality of memory cells. The program verification method includes applying a plurality of verification voltages, and determining whether programming of memory cells, having different target threshold voltage distributions, from among the plurality of memory cells is completed based on one of the plurality of verification voltages.
Abstract translation: 程序验证方法是用于对多个存储器单元进行编程的非易失性存储器件。 程序验证方法包括应用多个验证电压，并且基于多个验证电压中的一个来确定具有不同目标阈值电压分布的存储单元的编程是否从多个存储单元中的一个完成。
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