Invention Grant
US09406564B2 Singulation through a masking structure surrounding expitaxial regions
有权
通过围绕外延区域的掩蔽结构进行分割
- Patent Title: Singulation through a masking structure surrounding expitaxial regions
- Patent Title (中): 通过围绕外延区域的掩蔽结构进行分割
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Application No.: US14086886Application Date: 2013-11-21
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Publication No.: US09406564B2Publication Date: 2016-08-02
- Inventor: Manfred Engelhardt , Johannes Baumgartl , Manfred Kotek , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/20 ; H01L21/8234 ; H01L21/306 ; H01L21/78 ; H01L21/683 ; H01L21/265
Abstract:
In one embodiment, the semiconductor die includes a selective epitaxial layer including device regions, and a masking structure disposed around sidewalls of the epitaxial layer. The masking structure is part of an exposed surface of the semiconductor die.
Public/Granted literature
- US20150137144A1 Predetermined Kerf Regions and Methods of Fabrication Thereof Public/Granted day:2015-05-21
Information query
IPC分类:
