发明授权
- 专利标题: Cathode obtaining method and electron beam writing apparatus
- 专利标题(中): 阴极获得方法和电子束写入装置
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申请号: US14721380申请日: 2015-05-26
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公开(公告)号: US09412551B2公开(公告)日: 2016-08-09
- 发明人: Kenichi Saito , Ryoei Kobayashi
- 申请人: NuFlare Technology, Inc.
- 申请人地址: JP Yokohama
- 专利权人: NuFlare Technology, Inc.
- 当前专利权人: NuFlare Technology, Inc.
- 当前专利权人地址: JP Yokohama
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2014-119071 20140609
- 主分类号: H01J9/42
- IPC分类号: H01J9/42 ; H01J1/13 ; H01J9/02 ; H01J37/06 ; H01J37/317
摘要:
A cathode obtaining method includes producing a plurality of cathodes each including an electron emission member and a cover part, provided with a gap, which covers a side surface of the electron emission member, measuring an outer dimension of the upper surface of the electron emission member, for each of a plurality of cathodes, measuring an outer dimension of the gap at the same surface as the upper surface of the electron emission member, for each of a plurality of cathodes, calculating an area ratio by dividing the area of the gap, for each of a plurality of cathodes, obtaining an upper limit of the area ratio corresponding to a desired brightness by using a correlation between brightness and the area ratio, and selecting a cathode having the area ratio less than or equal to the upper limit from a plurality of cathodes that have been produced.