Invention Grant
US09418848B2 Methods of forming patterns with a mask formed utilizing a brush layer
有权
使用由刷层形成的掩模形成图案的方法
- Patent Title: Methods of forming patterns with a mask formed utilizing a brush layer
- Patent Title (中): 使用由刷层形成的掩模形成图案的方法
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Application No.: US14873089Application Date: 2015-10-01
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Publication No.: US09418848B2Publication Date: 2016-08-16
- Inventor: William R. Brown , Adam Olson , Kaveri Jain , Ho Seop Eom , Xue Gloria Chen , Nik Mirin , Dan Millward , Peter Trefonas, III , Phillip Dene Hustad , Jong Keun Park , Christopher Nam Lee
- Applicant: Micron Technology, Inc. , Dow Global Technologies LLC , Rohm and Haas Electronic Materials LLC
- Applicant Address: US ID Boise US MI Midland US MA Marlborough
- Assignee: Micron Technology, Inc.,Dow Global Technologies LLC,Rohm and Haas Electronic Materials LLC
- Current Assignee: Micron Technology, Inc.,Dow Global Technologies LLC,Rohm and Haas Electronic Materials LLC
- Current Assignee Address: US ID Boise US MI Midland US MA Marlborough
- Agency: Wells St. John P.S.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/302 ; H01L21/461 ; H01L21/027 ; H01L21/308 ; H01L21/033 ; H01L21/768
Abstract:
Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.
Public/Granted literature
- US20160027638A1 Methods of Forming Patterns Public/Granted day:2016-01-28
Information query
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