Invention Grant
- Patent Title: Integrated circuit and method of forming an integrated circuit
- Patent Title (中): 集成电路和形成集成电路的方法
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Application No.: US13315642Application Date: 2011-12-09
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Publication No.: US09418937B2Publication Date: 2016-08-16
- Inventor: Thomas Detzel , Johann Gross , Robert Illing , Maximilian Krug , Sven Gustav Lanzerstorfer , Michael Nelhiebel , Werner Robl , Michael Rogalli , Stefan Woehlert
- Applicant: Thomas Detzel , Johann Gross , Robert Illing , Maximilian Krug , Sven Gustav Lanzerstorfer , Michael Nelhiebel , Werner Robl , Michael Rogalli , Stefan Woehlert
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/532 ; H01L21/288
Abstract:
An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 μm and a ratio of average grain size to thickness of less than 0.7.
Public/Granted literature
- US20130147047A1 Integrated Circuit and Method of Forming an Integrated Circuit Public/Granted day:2013-06-13
Information query
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