Invention Grant
- Patent Title: Low power multi-stacked power amplifier
- Patent Title (中): 低功率多层功率放大器
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Application No.: US14286877Application Date: 2014-05-23
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Publication No.: US09419560B2Publication Date: 2016-08-16
- Inventor: Victor Korol , Shu-Hsien Liao
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/02 ; H03F3/193 ; H03F3/21 ; H03F1/22 ; H03F1/52 ; H03F3/24

Abstract:
An apparatus includes a plurality of stacked transistors in a multi-stacked power amplifier. At least one transistor of the plurality of stacked transistors is configured to operate in a first mode and in a second mode. The at least one transistor of the plurality of stacked transistors is configured to be biased by a low power biasing network to operate in the first mode.
Public/Granted literature
- US20150340992A1 LOW POWER MULTI-STACKED POWER AMPLIFIER Public/Granted day:2015-11-26
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