Invention Grant
- Patent Title: Sensing operations in a memory device
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Application No.: US14827371Application Date: 2015-08-17
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Publication No.: US09423969B2Publication Date: 2016-08-23
- Inventor: Jonathan Pabustan , Vishal Sarin , Dzung H. Nguyen
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G06F3/06 ; G11C16/08 ; G11C16/34 ; G11C16/32 ; G11C16/26 ; G11C16/10

Abstract:
Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.
Public/Granted literature
- US20150355849A1 SENSING OPERATIONS IN A MEMORY DEVICE Public/Granted day:2015-12-10
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