Invention Grant
- Patent Title: High-k transformers extending into multiple dielectric layers
- Patent Title (中): 高k变压器延伸到多个电介质层
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Application No.: US12955527Application Date: 2010-11-29
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Publication No.: US09424970B2Publication Date: 2016-08-23
- Inventor: Jun-De Jin , Tzu-Jin Yeh
- Applicant: Jun-De Jin , Tzu-Jin Yeh
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01F5/00
- IPC: H01F5/00 ; H01F27/28 ; H01F17/00

Abstract:
A device includes a first plurality of dielectric layers over a substrate and a second plurality of dielectric layers over the first plurality of dielectric layers. A metal inductor includes a first metal portion, a second metal portion, a third metal portion, and a fourth metal portion, wherein each of the first, the second, the third, and the fourth metal portions extends into the first and the second plurality of dielectric layers. A first metal bridge connects the first metal portion to the second metal portion, wherein the first metal bridge extends into the first plurality of dielectric layers and not into the second plurality of dielectric layers. A second metal bridge connects the third metal portion to the fourth metal portion, wherein the second metal bridge extends into the second plurality of dielectric layers and not into the first plurality of dielectric layers.
Public/Granted literature
- US20120133471A1 High-k Transformers Extending into Multiple Dielectric Layers Public/Granted day:2012-05-31
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