发明授权
- 专利标题： Band-gap reference circuit for biasing an RF device
- 专利标题（中）： 用于偏置RF器件的带隙参考电路
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申请号： US14739609申请日： 2015-06-15
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公开(公告)号： US09429975B2公开(公告)日： 2016-08-30
- 发明人: Ziv Alon , Aleksey A. Lyalin , Jing Sun , Tin Wai Kwan
- 申请人： Skyworks Solutions, Inc.
- 申请人地址： US MA Woburn
- 专利权人： SKYWORKS SOLUTIONS, INC.
- 当前专利权人： SKYWORKS SOLUTIONS, INC.
- 当前专利权人地址： US MA Woburn
- 代理机构： Knobbe Martens Olson & Bear LLP
- 主分类号： G05F3/26
- IPC分类号： G05F3/26 ; G05F3/20
摘要：
A voltage reference circuit implemented in GaAs to provide an output voltage component proportional to absolute temperature is described herein. The various embodiments of the voltage reference circuit described here can be used to provide precision voltage to bias a RF device. The voltage reference circuit can be provided on the same die as the RF device. The various embodiments described herein can be implemented in a GaAs material system.
公开/授权文献
- US20150365112A1 BAND-GAP REFERENCE CIRCUIT FOR BIASING AN RF DEVICE 公开/授权日：2015-12-17
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