-
公开(公告)号：US11496101B2
公开(公告)日：2022-11-08
申请号：US16422593
申请日：2019-05-24
发明人： Ziv Alon , Maxwell L. Thomas
摘要： A power amplifier system front end measures both forward and reverse power associated with an RF transmit signal. A processor is configured to use measurements derived from the measured forward and reverse power output to adjust the RF transmit signal in order to compensate for one or more memory effects of the power amplifier system.
-
公开(公告)号：US09571139B2
公开(公告)日：2017-02-14
申请号：US15222761
申请日：2016-07-28
发明人： Ziv Alon , Aleksey A. Lyalin , Jing Sun , Tin Wai Kwan
CPC分类号： H04B1/0475 , G05F3/20 , G05F3/267 , G05F3/30 , H03F3/195 , H03F3/213 , H03F3/24 , H03F2200/171 , H03F2200/451 , H03F2200/528 , H03F2200/555 , H04B2001/0408
摘要： Reference circuits for biasing radio frequency electronics are provided herein. In certain implementations, a gallium arsenide die includes a power amplifier configured to provide amplification to a signal, a reference voltage circuit including an output terminal that provides a reference voltage, and a mirror circuit configured to bias the power amplifier based on the reference voltage. The reference voltage circuit includes a bipolar transistor, a field effect transistor, and a circuit portion that generates a voltage that is proportional to absolute temperature. The reference voltage circuit generates the reference voltage based on a sum of a base-to-emitter voltage of the bipolar transistor, a turn-on voltage of the field effect transistor, and the voltage that is proportional to absolute temperature.
摘要翻译： 本文提供了用于偏置射频电子设备的参考电路。 在某些实施方案中，砷化镓晶片包括功率放大器，其被配置为向信号提供放大，参考电压电路包括提供参考电压的输出端子以及配置为基于参考电压偏置功率放大器的反射镜电路。 参考电压电路包括双极晶体管，场效应晶体管和产生与绝对温度成比例的电压的电路部分。 参考电压电路基于双极晶体管的基极 - 发射极电压，场效应晶体管的导通电压和与绝对温度成正比的电压之和产生参考电压。
-
公开(公告)号：US10033423B2
公开(公告)日：2018-07-24
申请号：US15485113
申请日：2017-04-11
发明人： Russ Alan Reisner , Joel Richard King , Ziv Alon , Tin Wai Kwan , Aleksey A. Lyalin , Xiaodong Xu
IPC分类号： H04B1/44 , H04B1/40 , H03F3/19 , H01L29/737 , H04W72/04 , H01L23/66 , H03F3/24 , H03F3/195 , H01L25/00 , H03F1/56 , H03F3/21 , H04W84/04 , H04B1/04
摘要： Systems, devices and methods related to stacked band selection switch devices. In some embodiments, an RF module can include a packaging substrate and a power amplifier (PA) assembly implemented on a PA die mounted on the packaging substrate. The RF module can further include an output matching network (OMN) device mounted on the packaging substrate and a band selection switch device mounted on the OMN device. The OMN device can be configured to provide output matching functionality for at least a portion of the PA assembly.
-
公开(公告)号：US20150333781A1
公开(公告)日：2015-11-19
申请号：US14715307
申请日：2015-05-18
发明人： Ziv Alon , Maxwell L. Thomas
CPC分类号： H03F3/19 , H03F1/0227 , H03F1/3247 , H03F3/21 , H03F3/245 , H03F2200/451 , H03F2201/3224 , H04B1/0475 , H04B1/30 , H04B2001/0425 , H04B2001/0433 , H04W88/02
摘要： A power amplifier system front end measures both forward and reverse power associated with an RF transmit signal. A processor is configured to use measurements derived from the measured forward and reverse power output to adjust the RF transmit signal in order to compensate for one or more memory effects of the power amplifier system.
摘要翻译： 功率放大器系统前端测量与RF发射信号相关联的正向和反向功率。 处理器被配置为使用从测量的正向和反向功率输出导出的测量来调整RF发射信号，以便补偿功率放大器系统的一个或多个存储器效应。
-
5.发明申请CIRCUIT AND METHOD FOR BIASING A GALLIUM ARSENIDE (GaAs) POWER AMPLIFIER 有权用于偏置砷化镓（GaAs）功率放大器的电路和方法公开(公告)号：US20140097900A1
公开(公告)日：2014-04-10
申请号：US14040523
申请日：2013-09-27
发明人： Ziv Alon , Shiaw Wen Chang , Andre Metzger
IPC分类号： H03F3/193
CPC分类号： H03F3/1935 , H03F1/0261 , H03F1/30 , H03F1/302 , H03F3/195 , H03F2200/18 , H03F2200/447 , H03F2200/451
摘要： A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.
摘要翻译： 用于偏置砷化镓（GaAs）功率放大器的电路包括在砷化镓（GaAs）材料系统中实现的参考电压发生器电路，在砷化镓材料系统中实现的场效应晶体管（FET）偏置电路， 输出参考电压发生器电路并且适于向射频（RF）放大器级提供输出。
-
公开(公告)号：US10333474B2
公开(公告)日：2019-06-25
申请号：US14715307
申请日：2015-05-18
发明人： Ziv Alon , Maxwell L. Thomas
摘要： A power amplifier system front end measures both forward and reverse power associated with an RF transmit signal. A processor is configured to use measurements derived from the measured forward and reverse power output to adjust the RF transmit signal in order to compensate for one or more memory effects of the power amplifier system.
-
7.发明授权公开(公告)号：US09344140B2
公开(公告)日：2016-05-17
申请号：US14630236
申请日：2015-02-24
发明人： Russ Alan Reisner , Joel Richard King , Ziv Alon , Tin Wai Kwan , Aleksey A. Lyalin , Xiaodong Xu
IPC分类号： H04B1/44 , H04B1/40 , H01L25/00 , H03F1/56 , H03F3/19 , H03F3/21 , H04B1/04 , H03F3/195 , H03F3/24
CPC分类号： H04B1/40 , H01L23/66 , H01L25/50 , H01L29/737 , H01L2223/6611 , H01L2223/6655 , H01L2223/6677 , H01L2223/6683 , H01L2224/05554 , H01L2224/16225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48145 , H01L2224/48227 , H01L2224/49171 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/211 , H03F3/24 , H03F3/245 , H03F2200/111 , H03F2200/451 , H03F2200/534 , H03F2203/21106 , H03F2203/21139 , H03F2203/21142 , H04B1/0458 , H04B2001/0408 , H04W72/0453 , H04W84/042 , H01L2924/00014 , H01L2924/00012
摘要： Systems, devices and methods related to improved radio-frequency (RF) modules. In some embodiments, an RF module can include a packaging substrate, a power amplifier (PA) assembly implemented on a first die mounted on the packaging substrate, and a controller circuit implemented on a second die mounted on the first die. The controller circuit can be configured to provide at least some control of the PA assembly. The RF module can further include one or more output matching network (OMN) devices mounted on the packaging substrate and configured to provide output matching functionality for the PA assembly. The RF module can further include a band selection switch device mounted on each OMN device.
摘要翻译： 与改进的射频（RF）模块有关的系统，设备和方法。 在一些实施例中，RF模块可以包括封装衬底，实现在安装在封装衬底上的第一裸片上的功率放大器（PA）组件，以及实现在安装在第一裸片上的第二裸片上的控制器电路。 控制器电路可以被配置为提供PA组件的至少一些控制。 RF模块还可以包括安装在封装衬底上的一个或多个输出匹配网络（OMN）设备，并且被配置为为PA组件提供输出匹配功能。 RF模块还可以包括安装在每个OMN设备上的频带选择开关装置。
-
公开(公告)号：US20190386621A1
公开(公告)日：2019-12-19
申请号：US16422593
申请日：2019-05-24
发明人： Ziv Alon , Maxwell L. Thomas
摘要： A power amplifier system front end measures both forward and reverse power associated with an RF transmit signal. A processor is configured to use measurements derived from the measured forward and reverse power output to adjust the RF transmit signal in order to compensate for one or more memory effects of the power amplifier system.
-
公开(公告)号：US09628134B2
公开(公告)日：2017-04-18
申请号：US15142222
申请日：2016-04-29
发明人： Russ Alan Reisner , Joel Richard King , Ziv Alon , Tin Wai Kwan , Aleksey A. Lyalin , Xiaodong Xu
IPC分类号： H04B1/44 , H04B1/40 , H01L25/00 , H03F1/56 , H03F3/19 , H03F3/21 , H04B1/04 , H03F3/195 , H03F3/24 , H01L23/66 , H01L29/737 , H04W72/04 , H04W84/04
CPC分类号： H04B1/40 , H01L23/66 , H01L25/50 , H01L29/737 , H01L2223/6611 , H01L2223/6655 , H01L2223/6677 , H01L2223/6683 , H01L2224/05554 , H01L2224/16225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48145 , H01L2224/48227 , H01L2224/49171 , H03F1/56 , H03F3/19 , H03F3/195 , H03F3/211 , H03F3/24 , H03F3/245 , H03F2200/111 , H03F2200/451 , H03F2200/534 , H03F2203/21106 , H03F2203/21139 , H03F2203/21142 , H04B1/0458 , H04B2001/0408 , H04W72/0453 , H04W84/042 , H01L2924/00014 , H01L2924/00012
摘要： Systems, devices and methods related to stacked band selection switch devices. In some embodiments, an RF module can include a packaging substrate and a power amplifier (PA) assembly implemented on a PA die mounted on the packaging substrate. The RF module can further include an output matching network (OMN) device mounted on the packaging substrate and a band selection switch device mounted on the OMN device. The OMN device can be configured to provide output matching functionality for at least a portion of the PA assembly.
-
公开(公告)号：US20160336979A1
公开(公告)日：2016-11-17
申请号：US15222761
申请日：2016-07-28
发明人： Ziv Alon , Aleksey A. Lyalin , Jing Sun , Tin Wai Kwan
CPC分类号： H04B1/0475 , G05F3/20 , G05F3/267 , G05F3/30 , H03F3/195 , H03F3/213 , H03F3/24 , H03F2200/171 , H03F2200/451 , H03F2200/528 , H03F2200/555 , H04B2001/0408
摘要： Reference circuits for biasing radio frequency electronics are provided herein. In certain implementations, a gallium arsenide die includes a power amplifier configured to provide amplification to a signal, a reference voltage circuit including an output terminal that provides a reference voltage, and a mirror circuit configured to bias the power amplifier based on the reference voltage. The reference voltage circuit includes a bipolar transistor, a field effect transistor, and a circuit portion that generates a voltage that is proportional to absolute temperature. The reference voltage circuit generates the reference voltage based on a sum of a base-to-emitter voltage of the bipolar transistor, a turn-on voltage of the field effect transistor, and the voltage that is proportional to absolute temperature.
摘要翻译： 本文提供了用于偏置射频电子设备的参考电路。 在某些实施方案中，砷化镓晶片包括功率放大器，其被配置为向信号提供放大，参考电压电路包括提供参考电压的输出端子以及配置为基于参考电压偏置功率放大器的反射镜电路。 参考电压电路包括双极晶体管，场效应晶体管和产生与绝对温度成比例的电压的电路部分。 参考电压电路基于双极晶体管的基极 - 发射极电压，场效应晶体管的导通电压和与绝对温度成正比的电压之和产生参考电压。
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.013 秒)