Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14809278Application Date: 2015-07-26
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Publication No.: US09431239B1Publication Date: 2016-08-30
- Inventor: Chiu-Te Lee , Ke-Feng Lin , Nien-Chung Li , Ching-Nan Hwang , Shih-Teng Huang , Ming-Yen Liu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201510336284 20150617
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/225 ; H01L21/311 ; H01L21/283 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L29/167 ; H01L29/49 ; H01L29/423
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a doped region in the substrate; forming a thermal oxide layer on the substrate and the doped region; removing the thermal oxide layer to form a first recess; forming an epitaxial layer on the substrate and in the first recess; and forming a gate dielectric layer in the epitaxial layer.
Information query
IPC分类:
