Graphene-metal E-fuse

Invention Grant

US09431346B2 Graphene-metal E-fuse 有权

Title translation: 石墨烯金属电熔丝

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Patent Title: Graphene-metal E-fuse
Patent Title (中): 石墨烯金属电熔丝
Application No.: US14454765

Application Date: 2014-08-08
Publication No.: US09431346B2

Publication Date: 2016-08-30
Inventor: Junjing Bao , Griselda Bonilla , Samuel S. Choi , Ronald G. Filippi , Andrew T. Kim , Naftali E. Lustig , Andrew H. Simon
Applicant: GLOBALFOUNDRIES INC.
Applicant Address: KY Grand Cayman
Assignee: GlobalFoundries, Inc.
Current Assignee: GlobalFoundries, Inc.
Current Assignee Address: KY Grand Cayman
Agency: Hoffman Warnick LLC
Agent Yuanmin Cai
Main IPC: H01L21/47
IPC: H01L21/47 ; H01L21/44 ; H01L23/532 ; H01L23/525 ; B82Y40/00 ; B82Y30/00

Abstract:

A structure including an Mx level including a first Mx metal, a second Mx metal, and a third Mx metal abutting and electrically connected in sequence with one another, the second Mx metal including graphene, and an Mx+1 level above the Mx level, the Mx+1 level including an Mx+1 metal and a via, the via electrically connects the third Mx metal to the Mx+1 metal in a vertical orientation.

Abstract(Chinese):

包括Mx级的结构，所述Mx级包括彼此顺序地邻接和电连接的第一Mx金属，第二Mx金属和第三Mx金属，所述第二Mx金属包括石墨烯，以及Mx级以上的Mx + 1级， Mx + 1电平包括Mx + 1金属和通孔，通孔以垂直方向将第三Mx金属电连接到Mx + 1金属。

Public/Granted literature

US20140346674A1 GRAPHENE-METAL E-FUSE Public/Granted day:2014-11-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469	......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理
H01L21/47	.......有机层，例如光刻胶（H01L21/475，H01L21/4757优先）