Invention Grant
- Patent Title: Semiconductor devices including capacitors and methods of manufacturing the same
- Patent Title (中): 包括电容器的半导体器件及其制造方法
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Application No.: US15087349Application Date: 2016-03-31
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Publication No.: US09431476B2Publication Date: 2016-08-30
- Inventor: Young-Seung Cho , Sung-Eui Kim , Ji-Young Kim , Hoon Jeong , Chan-Won Kim , Jong-Bom Seo , Seung-Jun Lee , Jun-Soo Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2013-0065699 20130610
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L49/02 ; H01L27/108 ; H01L21/764

Abstract:
A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.
Public/Granted literature
- US20160225845A1 SEMICONDUCTOR DEVICES INCLUDING CAPACITORS AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2016-08-04
Information query
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