Invention Grant
- Patent Title: Confined semi-metal field effect transistor
- Patent Title (中): 密闭半金属场效应晶体管
-
Application No.: US14625376Application Date: 2015-02-18
-
Publication No.: US09431529B2Publication Date: 2016-08-30
- Inventor: Ryan M. Hatcher , Jorge A. Kittl , Robert C. Bowen
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Convergent Law Group LLP
- Main IPC: H01L29/745
- IPC: H01L29/745 ; H01L29/74 ; H01L29/768 ; H01L27/095 ; H01L21/335 ; H01L29/78 ; H01L29/66 ; H01L29/06
Abstract:
Exemplary embodiments are disclosed for a semi-metal transistor, comprising: a semi-metal contact region adjacent to a metal contact; at least one semiconductor terminal; and a semi-metal transition region connected between the contact region and the semiconductor terminal that transitions from a substantially zero gap semi-metal beginning at an interface of the contact region into a semiconductor with an energy band gap towards the semiconductor terminal.
Public/Granted literature
- US20160071970A1 CONFINED SEMI-METAL FIELD EFFECT TRANSISTOR Public/Granted day:2016-03-10
Information query
IPC分类:
