Invention Grant
- Patent Title: Method for forming patterned conductive film
- Patent Title (中): 形成图案导电膜的方法
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Application No.: US14253459Application Date: 2014-04-15
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Publication No.: US09435032B2Publication Date: 2016-09-06
- Inventor: Tatsuya Shimoda , Yasuo Matsuki , Zhongrong Shen
- Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Applicant Address: JP Kawaguchi-shi
- Assignee: Japan Science and Technology Agency
- Current Assignee: Japan Science and Technology Agency
- Current Assignee Address: JP Kawaguchi-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-016674 20100128
- Main IPC: C23C18/16
- IPC: C23C18/16 ; C23C18/10 ; H05K3/18 ; C23C18/06 ; C23C18/08 ; C23C18/42 ; C23C22/73

Abstract:
The present invention is directed to a method for forming a patterned conductive film, which comprises the step of bringing a substrate having a layer made of platinum microcrystal particles formed thereon in a pattern and a complex of an amine compound and an aluminum hydride into contact with each other at a temperature of 50 to 120° C.According to the present invention, there is provided a method for forming a patterned conductive layer, which can ensure electrical bonding with a substrate and also can be suitably applied to various electronic devices, simply without requiring a massive and heavy apparatus.
Public/Granted literature
- US20140227436A1 METHOD FOR FORMING PATTERNED CONDUCTIVE FILM Public/Granted day:2014-08-14
Information query
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