Invention Grant
- Patent Title: Reversed build-up substrate for 2.5D
- Patent Title (中): 反向堆积基板2.5D
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Application No.: US14885466Application Date: 2015-10-16
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Publication No.: US09437536B1Publication Date: 2016-09-06
- Inventor: Liang Wang , Rajesh Katkar , Hong Shen , Cyprian Emeka Uzoh , Belgacem Haba
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/498 ; H01L21/48 ; H01L23/00

Abstract:
A method of making an assembly can include forming a circuit structure defining front and rear surfaces, and forming a substrate onto the rear surface. The forming of the circuit structure can include forming a first dielectric layer coupled to the carrier. The first dielectric layer can include front contacts configured for joining with contacts of one or more microelectronic elements, and first traces. The forming of the circuit structure can include forming rear conductive elements at the rear surface coupled with the front contacts through the first traces. The forming of the substrate can include forming a dielectric element directly on the rear surface. The dielectric element can have first conductive elements facing the rear conductive elements and joined thereto. The dielectric element can include second traces coupled with the first conductive elements. The forming of the substrate can include forming terminals at a surface of the substrate.
Information query
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