Invention Grant
- Patent Title: Interconnects having sealing structures to enable selective metal capping layers
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Application No.: US14569342Application Date: 2014-12-12
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Publication No.: US09437545B2Publication Date: 2016-09-06
- Inventor: Jun He , Kevin J. Fischer , Ying Zhou , Peter K. Moon
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/532 ; H01L21/768 ; H01L23/528 ; H01L21/02 ; H01L21/3205
Abstract:
Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.
Public/Granted literature
- US20150097292A1 INTERCONNECTS HAVING SEALING STRUCTURES TO ENABLE SELECTIVE METAL CAPPING LAYERS Public/Granted day:2015-04-09
Information query
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