公开(公告)号：US09437545B2

公开(公告)日：2016-09-06

申请号：US14569342

申请日：2014-12-12

Applicant: Intel Corporation

Inventor： Jun He ,  Kevin J. Fischer ,  Ying Zhou ,  Peter K. Moon

IPC: H01L23/52 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/76849 ,  H01L21/0217 ,  H01L21/02252 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76888 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.

公开(公告)号：US09984922B2

公开(公告)日：2018-05-29

申请号：US15254840

申请日：2016-09-01

Applicant: Intel Corporation

Inventor： Jun He ,  Kevin J. Fischer ,  Ying Zhou ,  Peter K. Moon

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/76849 ,  H01L21/0217 ,  H01L21/02252 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76844 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76888 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.