Invention Grant
- Patent Title: Semiconductor device, electronic component, and electronic device
- Patent Title (中): 半导体装置,电子部件和电子装置
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Application No.: US14993375Application Date: 2016-01-12
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Publication No.: US09443564B2Publication Date: 2016-09-13
- Inventor: Takahiko Ishizu , Wataru Uesugi , Kiyoshi Kato , Tatsuya Onuki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2015-012635 20150126
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C14/00

Abstract:
To provide a semiconductor device having a novel structure. To provide a semiconductor device excellent in reducing power consumption. A memory cell including an SRAM capable of backing up data to the nonvolatile memory and a peripheral circuit of the memory cell are configured to offer different power gating states. In a first period, which is extremely short, the bit line is brought into an electrically floating state by turning off the switch. In a second period, which is longer than the first period, power gating is performed on the memory cell. In a third period, which is longer than the second period, power gating is performed on the memory cell and the peripheral circuits.
Public/Granted literature
- US20160217848A1 SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE Public/Granted day:2016-07-28
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